The DOI matches its Crossref record; 9 of the 9 references it cites were found in a registry or an index.
A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View
Abstract
Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are described. Two important quantitative guidelines for the memory integration are provided with respect to the required numbers of signal wires and sneak current paths. The advantage of 3D CBAs over 2D CBAs (i.e., the decrease in effect memory cell size) can be exploited only under certain limited conditions due to the increased area and layout complexity of the periphery circuits. The sneak current problem can be mitigated by the adoption of different voltage application schemes and various selection devices. These have critical correlations, however, and depend on the involved types of resistance switching memory. The problem is quantitatively dealt with using the generalized equation for the overall resistance of the parasitic current paths. Atomic layer deposition is discussed in detail as the most feasible fabrication process of 3D CBAs because it can provide the device with the necessary conformality and atomic‐level accuracy in thickness control. Other subsidiary issues related to the line resistance, maximum available current, and fabrication technologies are also reviewed. Finally, a summary and outlook on various other applications of 3D CBAs are provided.
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Citations
Cites
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters · doi:10.1021/nl904092h · Cited by 4,174
Lee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Borghetti, J., Snider, G. S., Kuekes, P. J., Yang, J. J., Stewart, D. R., & Williams, R. S. (2010) · Nature · doi:10.1038/nature08940 · Cited by 1,929
Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors
Di Ventra, M., Pershin, Y. V., & Chua, L. O. (2009) · Proceedings of the IEEE · doi:10.1109/jproc.2009.2021077 · Cited by 1,212
Observation of conducting filament growth in nanoscale resistive memories
Yang, Y., Gao, P., Gaba, S., Chang, T., Pan, X., & Lu, W. (2012) · Nature Communications · doi:10.1038/ncomms1737 · Cited by 1,208
Electrochemical metallization memories—fundamentals, applications, prospects
Valov, I., Waser, R., Jameson, J. R., & Kozicki, M. N. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254003 · Cited by 921
Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
Guo, X., Schindler, C., Menzel, S., & Waser, R. (2007) · Applied Physics Letters · doi:10.1063/1.2793686 · Cited by 248
Four-dimensional address topology for circuits with stacked multilayer crossbar arrays
Strukov, D. B., & Williams, R. S. (2009) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0906949106 · Cited by 153
Cited by
Memristor‐Based Analog Computation and Neural Network Classification with a Dot Product Engine
Hu, M., Graves, C. E., Li, C., Li, Y., Ge, N., Montgomery, E., Davila, N., Jiang, H., Williams, R. S., Yang, J. J., et al. (2018) · Advanced Materials · doi:10.1002/adma.201705914 · Cited by 751
Three-dimensional memristor circuits as complex neural networks
Lin, P., Li, C., Wang, Z., Li, Y., Jiang, H., Song, W., Rao, M., Zhuo, Y., Upadhyay, N. K., Barnell, M., et al. (2020) · Nature Electronics · doi:10.1038/s41928-020-0397-9 · Cited by 375
Kim, K. M., Zhang, J., Graves, C., Yang, J. J., Choi, B. J., Hwang, C. S., Li, Z., & Williams, R. S. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b01781 · Cited by 246
Self-citationThree-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
Li, C., Han, L., Jiang, H., Jang, M.-H., Lin, P., Wu, Q., Barnell, M., Yang, J. J., Xin, H. L., & Xia, Q. (2017) · Nature Communications · doi:10.1038/ncomms15666 · Cited by 229
Hardware Implementation of Neuromorphic Computing Using Large‐Scale Memristor Crossbar Arrays
Li, Y., & Ang, K.-W. (2021) · Advanced Intelligent Systems · doi:10.1002/aisy.202000137 · Cited by 220
Metadata
- Authors
- Seok, J. Y., Song, S. J., Yoon, J. H., Yoon, K. J., Park, T. H., Kwon, D. E., Lim, H., Kim, G. H., Jeong, D. S., & Hwang, C. S.
- Venue
- Advanced Functional Materials
- Publisher
- Wiley
- Published
- 2014-07-03
- Volume
- 24
- Issue
- 34
- Pages
- 5316-5339
- ISSN
- 1616-301X (ISSN-L)
- 1616-3028
- OpenAlex
- W1998177673
- Cited by
- 383
- References
- 9
- FWCI
- 19.28
- Type
- journal article
- Language
- en
- Open access
- closed
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- Seok, J. Y., Song, S. J., Yoon, J. H., Yoon, K. J., Park, T. H., Kwon, D. E., Lim, H., Kim, G. H., Jeong, D. S., & Hwang, C. S. (2014). A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View. Advanced Functional Materials. https://doi.org/10.1002/adfm.201303520
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