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High‐Performance Sensors Based on Molybdenum Disulfide Thin Films

Open access
Lee, Kangho, Gatensby, Riley, McEvoy, Niall, Hallam, Toby, Duesberg, Georg S.·2013·Advanced Materials

Abstract

High-performance sensors based on molybdenum disulfide (MoS2 ) grown by sulfurization of sputtered molybdenum layers are presented. Using a simple integration scheme, it is found that the electrical conductivity of MoS2 films is highly sensitive to NH3 adsorption, consistent with n-type semiconducting behavior. A sensitivity of 300 ppb at room temperature is achieved, showing the high potential of 2D transition metal-dichalcogenides for sensing.

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Metadata

Authors
Lee, K., Gatensby, R., McEvoy, N., Hallam, T., & Duesberg, G. S.
Venue
Advanced Materials
Publisher
Wiley
Published
2013-09-12
Volume
25
Issue
46
Pages
6699-6702
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
OpenAlex
W2025015431
Cited by
499
References
0
FWCI
20.57
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: High‐Performance Sensors Based on Molybdenum Disulfide Thin Films. https://app.cochat.ai/papers/10.1002/adma.201303230
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Lee, K., Gatensby, R., McEvoy, N., Hallam, T., & Duesberg, G. S. (2013). High‐Performance Sensors Based on Molybdenum Disulfide Thin Films. Advanced Materials. https://doi.org/10.1002/adma.201303230

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