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Trap‐Limited Exciton Diffusion in Organic Semiconductors
Abstract
From time-resolved luminescence measurements it is demonstrated that the background concentration of excitonquenching defects in a range of organic semiconductors is the same as their electron-trap concentration. This observation suggests that the exciton-quenching defects and the electron traps share the same origin. The typical exciton diffusion length of 5–8 nm for organic semiconductors is therefore governed by the distance between the universal electron traps.
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Markov, D. E., Amsterdam, E., Blom, P. W. M., Sieval, A. B., & Hummelen, J. C. (2005) · The Journal of Physical Chemistry A · doi:10.1021/jp0509663 · Cited by 432
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Exciton diffusion in organic semiconductors
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Metadata
- Authors
- Mikhnenko, O. V., Kuik, M., Lin, J., van der Kaap, N., Nguyen, T., & Blom, P. W. M.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2013-12-19
- Volume
- 26
- Issue
- 12
- Pages
- 1912-1917
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2122856456
- Cited by
- 163
- References
- 1
- FWCI
- 7.19
- Type
- journal article
- Language
- en
- Open access
- closed
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- Mikhnenko, O. V., Kuik, M., Lin, J., van der Kaap, N., Nguyen, T., & Blom, P. W. M. (2014). Trap‐Limited Exciton Diffusion in Organic Semiconductors. Advanced Materials. https://doi.org/10.1002/adma.201304162
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