Student or educator? Sign up with your school email and get 6 months of Pro free.
Cited by 567

The DOI matches its Crossref record; 43 of the 43 references it cites were found in a registry or an index.

Resistive Switching Behavior in Organic–Inorganic Hybrid CH3NH3PbI3−xClx Perovskite for Resistive Random Access Memory Devices

Yoo, Eun Ji, Lyu, Miaoqiang, Yun, Jung‐Ho, Kang, Chi Jung, Choi, Young Jin, Wang, Lianzhou·2015·Advanced Materials

Abstract

The CH3 NH3 PbI3- x Clx organic-inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/CH3 NH3 PbI3- x Clx /FTO structure is fabricated by a low-temperature, solution-processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties.

Overview

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Integrity signals

Registry

Crossref · 10.1002/adma.201502889

Cites

43 of 43 references verified0 citation errors · 0 not checkable

Statistics

Verification

Claims the paper makes

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Self-check

Percentages, sums and reported differences re-computed from the paper’s own numbers.

The self-check needs the paper’s full text.

Citations

Cites

Show all 43 references

Cited by

See all 567

Metadata

Authors
Yoo, E. J., Lyu, M., Yun, J., Kang, C. J., Choi, Y. J., & Wang, L.
Venue
Advanced Materials
Publisher
Wiley
Published
2015-08-31
Volume
27
Issue
40
Pages
6170-6175
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
OpenAlex
W2166433039
Cited by
567
References
43
FWCI
19.41
Type
journal article
Language
en
Open access
closed

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

How to cite

Cite CoChat for the checks on this page, and the paper for its own findings.

This page
CoChat. (2026). Citation check: Resistive Switching Behavior in Organic–Inorganic Hybrid CH3NH3PbI3−xClx Perovskite for Resistive Random Access Memory Devices. https://app.cochat.ai/papers/10.1002/adma.201502889
The paper
Yoo, E. J., Lyu, M., Yun, J., Kang, C. J., Choi, Y. J., & Wang, L. (2015). Resistive Switching Behavior in Organic–Inorganic Hybrid CH3NH3PbI3−xClx Perovskite for Resistive Random Access Memory Devices. Advanced Materials. https://doi.org/10.1002/adma.201502889

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.