The DOI matches its Crossref record; 33 of the 33 references it cites were found in a registry or an index.
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters · doi:10.1021/nl904092h · Cited by 4,174
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Lee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Borghetti, J., Snider, G. S., Kuekes, P. J., Yang, J. J., Stewart, D. R., & Williams, R. S. (2010) · Nature · doi:10.1038/nature08940 · Cited by 1,929
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
Ohno, T., Hasegawa, T., Tsuruoka, T., Terabe, K., Gimzewski, J. K., & Aono, M. (2011) · Nature Materials · doi:10.1038/nmat3054 · Cited by 1,793
Cited by
Floquet Engineering of Quantum Materials
Oka, T., & Kitamura, S. (2019) · Annual Review of Condensed Matter Physics · doi:10.1146/annurev-conmatphys-031218-013423 · Cited by 999
Ferroelectric Analog Synaptic Transistors
Kim, M.-K., & Lee, J.-S. (2019) · Nano Letters · doi:10.1021/acs.nanolett.9b00180 · Cited by 594
Hardware implementation of memristor-based artificial neural networks
Aguirre, F., Sebastian, A., Le Gallo, M., Song, W., Wang, T., Yang, J. J., Lu, W., Chang, M.-F., Ielmini, D., Yang, Y., et al. (2024) · Nature Communications · doi:10.1038/s41467-024-45670-9 · Cited by 564
“A plethora of studies have revised the different switching mechanisms of memristive devices 205 – 212 , therefore we will not further dig into this issue.”
Analog Synaptic Behavior of a Silicon Nitride Memristor
Kim, S., Kim, H., Hwang, S., Kim, M.-H., Chang, Y.-F., & Park, B.-G. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.7b11191 · Cited by 252
Status and prospects of ZnO-based resistive switching memory devices
Simanjuntak, F. M., Panda, D., Wei, K.-H., & Tseng, T.-Y. (2016) · Nanoscale Research Letters · doi:10.1186/s11671-016-1570-y · Cited by 244
Metadata
- Authors
- Pan, F., Gao, S., Chen, C., Song, C., & Zeng, F.
- Venue
- Materials Science and Engineering: R: Reports
- Publisher
- Elsevier BV
- Published
- 2014-09
- Volume
- 83
- Pages
- 1-59
- ISSN
- 0927-796X (ISSN-L)
- OpenAlex
- W2034876082
- Cited by
- 1,403
- References
- 33
- FWCI
- 67.74
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Recent progress in resistive random access memories: Materials, switching mechanisms, and performance. https://app.cochat.ai/papers/10.1016/j.mser.2014.06.002
- The paper
- Pan, F., Gao, S., Chen, C., Song, C., & Zeng, F. (2014). Recent progress in resistive random access memories: Materials, switching mechanisms, and performance. Materials Science and Engineering: R: Reports. https://doi.org/10.1016/j.mser.2014.06.002
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
