Flexible MgO Barrier Magnetic Tunnel Junctions

Loong, Li Ming; Lee, Wonho; Qiu, Xuepeng; Yang, Ping; Kawai, Hiroyo; Saeys, Mark; Ahn, Jong‐Hyun; Yang, Hyunsoo

doi:10.1002/adma.201600062

Cited by 82Magnetic properties of thin films2D Materials and ApplicationsSemiconductor materials and devices

Flexible MgO Barrier Magnetic Tunnel Junctions

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Loong, Li Ming, Lee, Wonho, Qiu, Xuepeng, Yang, Ping, Kawai, Hiroyo, Saeys, Mark, Ahn, Jong‐Hyun, Yang, Hyunsoo·2016·Advanced Materials

DOI 10.1002/adma.201600062

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Abstract

Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components.

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Flexible waveguides and magnetic materials have been investigated for wearable strain sensing.
“Similar to the mechanism behind pressure sensing, flexible waveguides[136,153] and magnetic materials[187,188] have also been investigated for wearable strain sensing applications.”
From Flexible Electronics and Devices as Human–Machine Interfaces for Medical Robotics (2022) · cites this paper as [187]

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Authors: Loong, L. M., Lee, W., Qiu, X., Yang, P., Kawai, H., Saeys, M., Ahn, J., & Yang, H.
Affiliations: National University of Singapore (SG)
Yonsei University (KR)
Institute of Materials Research and Engineering (SG)
Ghent University (BE)
Corresponding author: Ahn, Jong‐Hyun
Yang, Hyunsoo
ORCID: Lee, Wonho
Qiu, Xuepeng
Yang, Ping
Kawai, Hiroyo
Saeys, Mark
Ahn, Jong‐Hyun
Yang, Hyunsoo
Venue: Advanced Materials
Publisher: Wiley
Published: 2016-04-27
Volume: 28
Issue: 25
Pages: 4983-4990
ISSN: 0935-9648 (ISSN-L)
1521-4095
DOI: 10.1002/adma.201600062
OpenAlex: W2298253961
Semantic Scholar: 4160d972102c2da198437249ec8a8458feb1a6dd
Cited by: 82
References: 50
Citations by year: 2026: 6 · 2025: 6 · 2024: 9 · 2023: 6 · 2022: 12 · 2021: 11 · 2020: 7 · 2019: 10 · 2018: 9 · 2017: 5 · 2016: 1
FWCI: 3.94
Type: journal article
Language: en
Open access: bronze
doi.org
Licence: onlinelibrary.wiley.com/termsAndConditions#vor (vor)
Locations: Advanced Materials (publishedVersion)
PubMed (publishedVersion)
arXiv (Cornell University) (submittedVersion)
Ghent University Academic Bibliography (Ghent University) (submittedVersion)
arXiv (Cornell University)
Funders: National Creative Research Laboratory (2015R1A3A2066337)
Yonsei University Future-leading Research Initiative
Topics: Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Magnetic properties of thin films
Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Keywords: magnetic tunnel junctions, MgO barrier, flexible electronics, transfer printing, tunnel magnetoresistance, residual strain, flexible memory

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Flexible MgO Barrier Magnetic Tunnel Junctions

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