The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
High Mobility 2D Palladium Diselenide Field‐Effect Transistors with Tunable Ambipolar Characteristics
Open accessAbstract
Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe 2), a noble‐transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field‐effect transistors (FETs) based on ultrathin PdSe 2 show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe 2 to exhibit electron‐dominated transport with high mobility (µe (max) = 216 cm 2 V−1 s−1) and on/off ratio up to 10 3. Hole‐dominated‐transport PdSe 2 can be obtained by molecular doping using F 4‐TCNQ. This pioneer work on PdSe 2 will spark interests in the less explored regime of noble‐TMDCs.
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Cites
Self-interaction correction to density-functional approximations for many-electron systems
Perdew, J. P., & Zunger, A. (1981) · Physical Review B · doi:10.1103/physrevb.23.5048 · Cited by 20,887
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Cited by
Progress, Challenges, and Opportunities for 2D Material Based Photodetectors
Long, M., Wang, P., Fang, H., & Hu, W. (2019) · Advanced Functional Materials · doi:10.1002/adfm.201803807 · Cited by 1,598
Liang, S., Cheng, B., Cui, X., & Miao, F. (2020) · Advanced Materials · doi:10.1002/adma.201903800 · Cited by 537
Zeng, L., Chen, Q., Zhang, Z., Wu, D., Yuan, H., Li, Y., Qarony, W., Lau, S. P., Luo, L., & Tsang, Y. H. (2019) · Advanced Science · doi:10.1002/advs.201901134 · Cited by 465
Self-citationPalladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability
Long, M., Wang, Y., Wang, P., Zhou, X., Xia, H., Luo, C., Huang, S., Zhang, G., Yan, H., Fan, Z., et al. (2019) · ACS Nano · doi:10.1021/acsnano.8b09476 · Cited by 309
Metadata
- Authors
- Chow, W. L., Yu, P., Liu, F., Hong, J., Wang, X., Zeng, Q., Hsu, C., Zhu, C., Zhou, J., Wang, X., Xia, J., Yan, J., Chen, Y., Wu, D., Yu, T., Shen, Z., Lin, H., Jin, C., Tay, B. K., & Liu, Z.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2017-04-03
- Volume
- 29
- Issue
- 21
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2605339079
- Cited by
- 352
- References
- 3
- FWCI
- 13.21
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Chow, W. L., Yu, P., Liu, F., Hong, J., Wang, X., Zeng, Q., Hsu, C., Zhu, C., Zhou, J., Wang, X., Xia, J., Yan, J., Chen, Y., Wu, D., Yu, T., Shen, Z., Lin, H., Jin, C., Tay, B. K., & Liu, Z. (2017). High Mobility 2D Palladium Diselenide Field‐Effect Transistors with Tunable Ambipolar Characteristics. Advanced Materials. https://doi.org/10.1002/adma.201602969
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