The DOI matches its Crossref record; 9 of the 9 references it cites were found in a registry or an index.
Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies
Abstract
are studied by electron holography and in situ energy-filtered imaging. The results show that oxygen vacancies are gradually generated in the oxide layer under ramped electrical bias, and finally form several conductive channels connecting the two electrodes. It also shows that the switching process occurs at the top interface of the hafnia layer.
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Citations
Cites
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Training and operation of an integrated neuromorphic network based on metal-oxide memristors
Prezioso, M., Merrikh-Bayat, F., Hoskins, B. D., Adam, G. C., Likharev, K. K., & Strukov, D. B. (2015) · Nature · doi:10.1038/nature14441 · Cited by 3,001
Lee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
Nanobatteries in redox-based resistive switches require extension of memristor theory
Valov, I., Linn, E., Tappertzhofen, S., Schmelzer, S., van den Hurk, J., Lentz, F., & Waser, R. (2013) · Nature Communications · doi:10.1038/ncomms2784 · Cited by 587
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
Padovani, A., Larcher, L., Pirrotta, O., Vandelli, L., & Bersuker, G. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2418114 · Cited by 219
Celano, U., Goux, L., Degraeve, R., Fantini, A., Richard, O., Bender, H., Jurczak, M., & Vandervorst, W. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b03078 · Cited by 186
Cited by
Resistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214
Understanding memristive switching via in situ characterization and device modeling
Sun, W., Gao, B., Chi, M., Xia, Q., Yang, J. J., Qian, H., & Wu, H. (2019) · Nature Communications · doi:10.1038/s41467-019-11411-6 · Cited by 482
Self-citationTian, H., Zhao, L., Wang, X., Yeh, Y.-W., Yao, N., Rand, B. P., & Ren, T.-L. (2017) · ACS Nano · doi:10.1021/acsnano.7b05726 · Cited by 371
Kim, G. S., Song, H., Lee, Y. K., Kim, J. H., Kim, W., Park, T. H., Kim, H. J., Min Kim, K., & Hwang, C. S. (2019) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.9b16499 · Cited by 64
A Compact Model of Analog RRAM With Device and Array Nonideal Effects for Neuromorphic Systems
Liao, Y., Gao, B., Xu, F., Yao, P., Chen, J., Zhang, W., Tang, J., Wu, H., & Qian, H. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.2975314 · Cited by 53
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Metadata
- Authors
- Li, C., Gao, B., Yao, Y., Guan, X., Shen, X., Wang, Y., Huang, P., Liu, L., Liu, X., Li, J., Gu, C., Kang, J., & Yu, R.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2017-01-11
- Volume
- 29
- Issue
- 10
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2579693087
- Cited by
- 173
- References
- 9
- FWCI
- 10.18
- Type
- journal article
- Language
- en
- Open access
- closed
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- Li, C., Gao, B., Yao, Y., Guan, X., Shen, X., Wang, Y., Huang, P., Liu, L., Liu, X., Li, J., Gu, C., Kang, J., & Yu, R. (2017). Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies. Advanced Materials. https://doi.org/10.1002/adma.201602976
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