The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Electronic and Optoelectronic Devices based on Two‐Dimensional Materials: From Fabrication to Application
Abstract
Since the rediscovery of graphene in 2004, this material has attracted an enormous amount of interest owing to its unique structural, mechanical, electronic, and optical properties. Beyond this, the unique properties of graphene have also triggered extensive research on other two‐dimensional (2D) materials including transition metal dichalcogenides (TMDs), particularly for electronic and optoelectronic device applications. In particular, not only single junction but also various heterojunction devices based on 2D materials have afforded novel functionality and advances in many research fields. The availability of various 2D materials could allow the formation of a wide variety of heterojunctions with desired band alignments, thereby providing a powerful fabrication process platform for high‐performance electronic and optoelectronic devices. In this review, the important fabrication techniques of i) doping, ii) contact engineering, and iii) heterojunction formation for improving the performance of 2D‐material‐based devices are first introduced. Promising 2D‐material‐based electronic and optoelectronic devices are then discussed, including lateral/vertical field‐effect transistors (FETs), negative differential resistance (NDR) devices, memory, photodetectors, photovoltaics, and light‐emitting diode (LED) devices.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Fine Structure Constant Defines Visual Transparency of Graphene
Nair, R. R., Blake, P., Grigorenko, A. N., Novoselov, K. S., Booth, T. J., Stauber, T., Peres, N. M. R., & Geim, A. K. (2008) · Science · doi:10.1126/science.1156965 · Cited by 9,084
Cited by
Artificial optic-neural synapse for colored and color-mixed pattern recognition
Seo, S., Jo, S.-H., Kim, S., Shim, J., Oh, S., Kim, J.-H., Heo, K., Choi, J.-W., Choi, C., Oh, S., et al. (2018) · Nature Communications · doi:10.1038/s41467-018-07572-5 · Cited by 731
Self-citationEmerging in‐plane anisotropic two‐dimensional materials
Li, L., Han, W., Pi, L., Niu, P., Han, J., Wang, C., Su, B., Li, H., Xiong, J., Bando, Y., et al. (2019) · InfoMat · doi:10.1002/inf2.12005 · Cited by 382
Metadata
- Authors
- Shim, J., Park, H., Kang, D., Kim, J., Jo, S., Park, Y., & Park, J.
- Venue
- Advanced Electronic Materials
- Publisher
- Wiley
- Published
- 2017-01-31
- Volume
- 3
- Issue
- 4
- ISSN
- 2199-160X (ISSN-L)
- OpenAlex
- W2583632076
- Cited by
- 223
- References
- 3
- FWCI
- 7.57
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Electronic and Optoelectronic Devices based on Two‐Dimensional Materials: From Fabrication to Application. https://app.cochat.ai/papers/10.1002/aelm.201600364
- The paper
- Shim, J., Park, H., Kang, D., Kim, J., Jo, S., Park, Y., & Park, J. (2017). Electronic and Optoelectronic Devices based on Two‐Dimensional Materials: From Fabrication to Application. Advanced Electronic Materials. https://doi.org/10.1002/aelm.201600364
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.