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Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

Park, Min Hyuk, Kim, Han Joon, Kim, Yu Jin, Moon, Taehwan, Kim, Keum Do, Hwang, Cheol Seong·2014·Advanced Energy Materials

Abstract

The promising energy storage properties of new lead-free antiferroelectric HfxZr1-xO2 (x = 0.1–0.4) films with high energy storage density are reported. The energy storage density of the Hf0.3Zr0.7O2 capacitor does not decrease with the increase in temperature up to 175 °C, and it decreases by only ≈4.5% after field cycling 109 times.

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Metadata

Authors
Park, M. H., Kim, H. J., Kim, Y. J., Moon, T., Kim, K. D., & Hwang, C. S.
Venue
Advanced Energy Materials
Publisher
Wiley
Published
2014-07
Volume
4
Issue
16
ISSN
  • 1614-6832 (ISSN-L)
  • 1614-6840
OpenAlex
W2119033937
Cited by
344
References
0
FWCI
8.93
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability. https://app.cochat.ai/papers/10.1002/aenm.201400610
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Park, M. H., Kim, H. J., Kim, Y. J., Moon, T., Kim, K. D., & Hwang, C. S. (2014). Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability. Advanced Energy Materials. https://doi.org/10.1002/aenm.201400610

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