The DOI matches its Crossref record; 163 of the 163 references it cites were found in a registry or an index.
Memory materials and devices: From concept to application
Open accessAbstract
Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory technology. As is well known, better data storage is mostly achieved by miniaturization. However, as the size of the memory device is reduced, a series of problems, such as drain gate‐induced leakage, greatly hinder the performance of memory units. To meet the increasing demands of information technology, novel and high‐performance memory is urgently needed. Fortunately, emerging memory technologies are expected to improve memory performance and drive the information revolution. This review will focus on the progress of several emerging memory technologies, including two‐dimensional material‐based memories, resistance random access memory (RRAM), magnetic random access memory (MRAM), and phase‐change random access memory (PCRAM). Advantages, mechanisms, and applications of these diverse memory technologies will be discussed in this review. image
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
LeCun, Y., Bengio, Y., & Hinton, G. (2015) · Nature · doi:10.1038/nature14539 · Cited by 84,126
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene
Lee, C., Wei, X., Kysar, J. W., & Hone, J. (2008) · Science · doi:10.1126/science.1157996 · Cited by 20,847
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
Emerging Photoluminescence in Monolayer MoS2
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010) · Nano Letters · doi:10.1021/nl903868w · Cited by 9,501
Boron nitride substrates for high-quality graphene electronics
Dean, C. R., Young, A. F., Meric, I., Lee, C., Wang, L., Sorgenfrei, S., Watanabe, K., Taniguchi, T., Kim, P., Shepard, K. L., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.172 · Cited by 7,124
Cited by
Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing
Wang, S., Liu, L., Gan, L., Chen, H., Hou, X., Ding, Y., Ma, S., Zhang, D. W., & Zhou, P. (2021) · Nature Communications · doi:10.1038/s41467-020-20257-2 · Cited by 346
Self-citationMemristive Crossbar Arrays for Storage and Computing Applications
Li, H., Wang, S., Zhang, X., Wang, W., Yang, R., Sun, Z., Feng, W., Lin, P., Wang, Z., Sun, L., et al. (2021) · Advanced Intelligent Systems · doi:10.1002/aisy.202100017 · Cited by 205
Self-citationFlexible 3D memristor array for binary storage and multi‐states neuromorphic computing applications
Wang, T., Meng, J., Chen, L., Zhu, H., Sun, Q., Ding, S., Bao, W., & Zhang, D. W. (2021) · InfoMat · doi:10.1002/inf2.12158 · Cited by 118
Self‐Rectifying Memristors for Three‐Dimensional In‐Memory Computing
Ren, S., Dong, A., Yang, L., Xue, Y., Li, J., Yu, Y., Zhou, H., Zuo, W., Li, Y., Cheng, W., et al. (2024) · Advanced Materials · doi:10.1002/adma.202307218 · Cited by 96
Chen, Q., Han, T., Tang, M., Zhang, Z., Zheng, X., & Liu, G. (2020) · Micromachines · doi:10.3390/mi11040427 · Cited by 9
Self-citation
Metadata
- Authors
- Zhang, Z., Wang, Z., Shi, T., Bi, C., Rao, F., Cai, Y., Liu, Q., Wu, H., & Zhou, P.
- Venue
- InfoMat
- Publisher
- Wiley
- Published
- 2020-01-19
- Volume
- 2
- Issue
- 2
- Pages
- 261-290
- ISSN
- 2567-3165 (ISSN-L)
- OpenAlex
- W3002434563
- Cited by
- 258
- References
- 163
- FWCI
- 15.02
- Type
- journal article
- Language
- en
- Open access
- gold
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Memory materials and devices: From concept to application. https://app.cochat.ai/papers/10.1002/inf2.12077
- The paper
- Zhang, Z., Wang, Z., Shi, T., Bi, C., Rao, F., Cai, Y., Liu, Q., Wu, H., & Zhou, P. (2020). Memory materials and devices: From concept to application. InfoMat. https://doi.org/10.1002/inf2.12077
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.