Self‐Rectifying Memristors for Three‐Dimensional In‐Memory Computing
Abstract
Costly data movement in terms of time and energy in traditional von Neumann systems is exacerbated by emerging information technologies related to artificial intelligence. In‐memory computing (IMC) architecture aims to address this problem. Although the IMC hardware prototype represented by a memristor is developed rapidly and performs well, the sneak path issue is a critical and unavoidable challenge prevalent in large‐scale and high‐density crossbar arrays, particularly in three‐dimensional (3D) integration. As a perfect solution to the sneak‐path issue, a self‐rectifying memristor (SRM) is proposed for 3D integration because of its superior integration density. To date, SRMs have performed well in terms of power consumption (aJ level) and scalability (>10 2 Mbit). Moreover, SRM‐configured 3D integration is considered an ideal hardware platform for 3D IMC. This review focuses on the progress in SRMs and their applications in 3D memory, IMC, neuromorphic computing, and hardware security. The advantages, disadvantages, and optimization strategies of SRMs in diverse application scenarios are illustrated. Challenges posed by physical mechanisms, fabrication processes, and peripheral circuits, as well as potential solutions at the device and system levels, are also discussed.
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Non-Ohmic conduction is an inherent challenge in low-current devices.
“This is not a specific problem in our device but is an inherent challenge in low-current devices, where the conduction mechanism is non-Ohmic38,39.”
From Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis (2025) · cites this paper as [38]
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- Authors
- Ren, S., Dong, A., Yang, L., Xue, Y., Li, J., Yu, Y., Zhou, H., Zuo, W., Li, Y., Cheng, W., & Miao, X.
- Affiliations
- Huazhong University of Science and Technology (CN)
- School of Integrated Circuits Hubei Key Laboratory of Advanced Memories Huazhong University of Science and Technology Wuhan 430074 China
- Corresponding author
- Li, Yi
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2023-11-27
- Volume
- 36
- Issue
- 4
- Pages
- e2307218-e2307218
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W4388774421
- Cited by
- 96
- References
- 25
- Citations by year
- 2026: 37 · 2025: 41 · 2024: 18
- FWCI
- 1.62
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Advanced Materials (publishedVersion)
- PubMed (publishedVersion)
- Funders
- National Natural Science Foundation of China (92064012)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › 3D IC and TSV technologies
- Keywords
- self-rectifying memristors, in-memory computing, 3D integration, sneak paths, crossbar arrays, neuromorphic computing, hardware security, 3D memory, energy-efficient computing, device physics, peripheral circuits
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