The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology
Abstract
AlGaN/GaN heterostructure devices are capable of delivering high‐frequency power amplifiers and power switches with performances far superior than those offered by the mainstream silicon technology and other advanced semiconductor technologies. Primarily driven by applications' need, the last few years have witnessed major effort in the development of AlGaN/GaN enhancement‐mode (E‐mode) HEMTs and MIS‐HEMT. This paper attempts to review the latest progresses in this technology, including alternative approaches and device characteristics. Application examples of the E‐mode HEMT technology are also discussed.
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Cites
Uemoto, Y., Hikita, M., Ueno, H., Matsuo, H., Ishida, H., Yanagihara, M., Ueda, T., Tanaka, T., & Ueda, D. (2007) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.908601 · Cited by 1,038
Cited by
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Wang, H., Wei, J., Xie, R., Liu, C., Tang, G., & Chen, K. J. (2017) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2016.2610460 · Cited by 283
Self-citationEmbedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits
Erp, R. V., Kampitsis, G., Nela, L., Ardebili, R. S., & Matioli, E. (2020) · 2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm) · doi:10.1109/itherm45881.2020.9190356 · Cited by 33
Metadata
- Authors
- Chen, K. J., & Zhou, C.
- Venue
- physica status solidi (a)
- Publisher
- Wiley
- Published
- 2010-10-18
- Volume
- 208
- Issue
- 2
- Pages
- 434-438
- ISSN
- 0031-8965 (ISSN-L)
- 1862-6300
- 1862-6319
- OpenAlex
- W2005037605
- Cited by
- 192
- References
- 1
- FWCI
- 3.57
- Type
- journal article
- Language
- en
- Open access
- closed
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- Chen, K. J., & Zhou, C. (2011). Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology. physica status solidi (a). https://doi.org/10.1002/pssa.201000631
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
