The DOI matches its Crossref record; 22 of the 22 references it cites were found in a registry or an index.
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations
Abstract
The systematic characterization of a 650-V/13-A enhancement-mode GaN power transistor with p-GaN gate is presented. Critical device parameters such as ON-resistance RONand threshold voltage VTHare evaluated under both static and dynamic (i.e., switching) operating conditions. The dynamic RONis found to exhibit different dependence on the gate drive voltage VGSfrom the static RON. While reasonably suppressed at higher VGSof 5 and 6 V, the degradation in dynamic RONis significantly larger at lower VGSof 3-4 V, which is attributed to the positive shift in VTHunder switching operations. In addition to characterization of discrete devices, a custom-designed double-pulse test circuit with 400-V, 10-A test capability is built to evaluate the transient switching performance of the p-GaN gate power transistors. Optimal gate drive conditions are proposed to: 1) provide sufficient gate over-drive to minimize the impact of the VTHshift on the dynamic RON; and 2) leave enough headroom to save the device from excessive gate stresses. Moreover, gate drive circuit design and board layout considerations are also discussed by taking into account the fast switching characteristics of GaN devices.
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Uemoto, Y., Hikita, M., Ueno, H., Matsuo, H., Ishida, H., Yanagihara, M., Ueda, T., Tanaka, T., & Ueda, D. (2007) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.908601 · Cited by 1,038
GaN Transistors for Efficient Power Conversion
(2014) · Wiley eBooks · doi:10.1002/9781118844779 · Cited by 530
1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
Chu, R., Corrion, A., Chen, M., Li, R., Wong, D., Zehnder, D., Hughes, B., & Boutros, K. (2011) · IEEE Electron Device Letters · doi:10.1109/led.2011.2118190 · Cited by 367
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
Hwang, I., Kim, J., Choi, H. S., Choi, H., Lee, J., Kim, K. Y., Park, J.-B., Lee, J. C., Ha, J., Oh, J., et al. (2013) · IEEE Electron Device Letters · doi:10.1109/led.2012.2230312 · Cited by 299
Wu, T.-L., Marcon, D., You, S., Posthuma, N., Bakeroot, B., Stoffels, S., Van Hove, M., Groeseneken, G., & Decoutere, S. (2015) · IEEE Electron Device Letters · doi:10.1109/led.2015.2465137 · Cited by 234
Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology
Chen, K. J., & Zhou, C. (2011) · physica status solidi (a) · doi:10.1002/pssa.201000631 · Cited by 192
Self-citationTime-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate
Rossetto, I., Meneghini, M., Hilt, O., Treidel, E. B., Santi, C. D., Dalcanale, S., Wuerfl, J., Zanoni, E., & Meneghesso, G. (2016) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2016.2553721 · Cited by 173
Application-based review of GaN HFETs
Jones, E. A., Wang, F., & Ozpineci, B. (2014) · 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications · doi:10.1109/wipda.2014.6964617 · Cited by 165
Evaluation of the switching characteristics of a gallium-nitride transistor
Danilovic, M., Chen, Z., Wang, R., Luo, F. L., Boroyevich, D., & Mattavelli, P. (2011) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2011.6064128 · Cited by 150
Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors
Lee, F., Su, L.-Y., Wang, C., Wu, Y., & Huang, J. (2015) · IEEE Electron Device Letters · doi:10.1109/led.2015.2395454 · Cited by 143
Cited by
The 2018 GaN power electronics roadmap
Amano, H., Baines, Y., Beam, E., Borga, M., Bouchet, T., Chalker, P. R., Charles, M., Chen, K. J., Chowdhury, N., Chu, R., et al. (2018) · Journal of Physics D: Applied Physics · doi:10.1088/1361-6463/aaaf9d · Cited by 1,313
Self-citationWide Bandgap Devices in AC Electric Drives: Opportunities and Challenges
Morya, A. K., Gardner, M. C., Anvari, B., Liu, L., Yepes, A. G., Doval-Gandoy, J., & Toliyat, H. A. (2019) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2019.2892807 · Cited by 444
Stability, Reliability, and Robustness of GaN Power Devices: A Review
Kozak, J. P., Zhang, R., Porter, M., Song, Q., Liu, J., Wang, B., Wang, R., Saito, W., & Zhang, Y. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3266365 · Cited by 441
A Review of GaN HEMT Dynamic On-Resistance and Dynamic Stress Effects on Field Distribution
Gill, L., DasGupta, S., Neely, J. C., Kaplar, R. J., & Michaels, A. J. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3318182 · Cited by 68
Chen, J., Hua, M., Jiang, J., He, J., Wei, J., & Chen, K. J. (2020) · 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) · doi:10.1109/ispsd46842.2020.9170043 · Cited by 23
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Metadata
- Authors
- Wang, H., Wei, J., Xie, R., Liu, C., Tang, G., & Chen, K. J.
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2017-07
- Volume
- 32
- Issue
- 7
- Pages
- 5539-5549
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W2519239207
- Cited by
- 283
- References
- 22
- FWCI
- 15.13
- Type
- journal article
- Language
- en
- Open access
- closed
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