The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Fabrication of Single‐ and Multilayer MoS2 Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature
Abstract
Single- and multilayer MoS(2) films are deposited onto Si/SiO(2) using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS(2) device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS(2) devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm.
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Cites
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Cited by
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Self-citationSynthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition
Lee, Y., Zhang, X., Zhang, W., Chang, M., Lin, C., Chang, K., Yu, Y., Wang, J. T., Chang, C., Li, L., et al. (2012) · Advanced Materials · doi:10.1002/adma.201104798 · Cited by 3,422
Recent development of two-dimensional transition metal dichalcogenides and their applications
Choi, W., Choudhary, N., Han, G. H., Park, J., Akinwande, D., & Lee, Y. H. (2017) · Materials Today · doi:10.1016/j.mattod.2016.10.002 · Cited by 2,769
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Metadata
- Authors
- Li, H., Yin, Z., He, Q., Li, H., Huang, X., Lu, G., Fam, D. W. H., Tok, A. I. Y., Zhang, Q., & Zhang, H.
- Venue
- Small
- Publisher
- Wiley
- Published
- 2011-10-20
- Volume
- 8
- Issue
- 1
- Pages
- 63-67
- ISSN
- 1613-6810 (ISSN-L)
- 1613-6829
- OpenAlex
- W1973130783
- Cited by
- 1,536
- References
- 1
- FWCI
- 54.81
- Type
- journal article
- Language
- en
- Open access
- closed
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- The paper
- Li, H., Yin, Z., He, Q., Li, H., Huang, X., Lu, G., Fam, D. W. H., Tok, A. I. Y., Zhang, Q., & Zhang, H. (2012). Fabrication of Single‐ and Multilayer MoS2 Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature. Small. https://doi.org/10.1002/smll.201101016
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