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Memory Devices Using a Mixture of MoS2 and Graphene Oxide as the Active Layer
Abstract
A mixed film consisting of 2D MoS₂ and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS₂ component in the MoS₂-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS₂-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤ 1.5 V) and high ON/OFF current ratio (≈ 10²).
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Cited by
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Two-dimensional transition metal dichalcogenide nanosheet-based composites
Tan, C., & Zhang, H. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00182f · Cited by 1,605
Self-citationSolution‐Processed Two‐Dimensional MoS2 Nanosheets: Preparation, Hybridization, and Applications
Zhang, X., Lai, Z., Tan, C., & Zhang, H. (2016) · Angewandte Chemie International Edition · doi:10.1002/anie.201509933 · Cited by 678
Self-citationMemristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets
Cheng, P., Sun, K., & Hu, Y. H. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b04260 · Cited by 409
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
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Metadata
- Authors
- Yin, Z., Zeng, Z., Liu, J., He, Q., Chen, P., & Zhang, H.
- Venue
- Small
- Publisher
- Wiley
- Published
- 2012-11-19
- Volume
- 9
- Issue
- 5
- Pages
- 727-731
- ISSN
- 1613-6810 (ISSN-L)
- 1613-6829
- OpenAlex
- W2084253064
- Cited by
- 162
- References
- 0
- FWCI
- 9.16
- Type
- journal article
- Language
- en
- Open access
- closed
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- Yin, Z., Zeng, Z., Liu, J., He, Q., Chen, P., & Zhang, H. (2013). Memory Devices Using a Mixture of MoS2 and Graphene Oxide as the Active Layer. Small. https://doi.org/10.1002/smll.201201940
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