Nonlinearity in memristors for neuromorphic dynamic systems
Open accessAbstract
As semiconductor technology enters the more than Moore era, there exists an apparent contradiction between the rapidly growing demands for data processing and the visible inefficiency rooted in traditional computing architecture. Neuromorphic systems hold great prospects in enabling a new generation of computing paradigm that can address this issue, which demands device components with rich dynamics and nonlinearity. Herein, the nonlinearity in memristive devices and their application in building neuromorphic dynamic systems are reviewed. The internal mechanisms that endow memristive devices with nonlinearity and rich dynamics are reviewed and subsequently the nonlinear spiking neurons that are implemented utilizing the physical processes in memristors are shown. Typical examples on neuromorphic dynamic systems based on nonlinear memristors are summarized, including memristive reservoir, memristive oscillatory neural network, and memristive chaotic computing. Finally, an outlook in the development of neuromorphic dynamic systems is given.
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
Oxide-based memristors can be largely affected not only by the filament radius, but also by the device temperature.
“Second-order memristors have been actively demonstrated in previous studies, showing that oxide-based memristors can be largely affected not only by the filament radius, but also by the device temperature.34,37”
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,744 · see citing works
Memristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268 · see citing works
Hopfield, J. J. (1984) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.81.10.3088 · Cited by 6,918 · see citing works
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923 · see citing works
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters · doi:10.1021/nl904092h · Cited by 4,174 · see citing works
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885 · see citing works
Self-citationHarnessing Nonlinearity: Predicting Chaotic Systems and Saving Energy in Wireless Communication
Jaeger, H., & Haas, H. (2004) · Science · doi:10.1126/science.1091277 · Cited by 3,811 · see citing works
Training and operation of an integrated neuromorphic network based on metal-oxide memristors
Prezioso, M., Merrikh-Bayat, F., Hoskins, B. D., Adam, G. C., Likharev, K. K., & Strukov, D. B. (2015) · Nature · doi:10.1038/nature14441 · Cited by 3,001 · see citing works
Memristive devices and systems
Chua, L. O., & Kang, S. M. (1976) · Proceedings of the IEEE · doi:10.1109/proc.1976.10092 · Cited by 2,604 · see citing works
Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
Wang, Z., Joshi, S., Savel’ev, S. E., Jiang, H., Midya, R., Lin, P., Hu, M., Ge, N., Strachan, J. P., Li, Z., et al. (2017) · Nature Materials · doi:10.1038/nmat4756 · Cited by 2,358 · see citing works
Self-citationShort-term plasticity and long-term potentiation mimicked in single inorganic synapses
Ohno, T., Hasegawa, T., Tsuruoka, T., Terabe, K., Gimzewski, J. K., & Aono, M. (2011) · Nature Materials · doi:10.1038/nmat3054 · Cited by 1,793 · see citing works
Resistance switching memories are memristors
Chua, L. (2011) · Applied Physics A · doi:10.1007/s00339-011-6264-9 · Cited by 1,434 · see citing works
Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing
Kuzum, D., Jeyasingh, R. G. D., Lee, B., & Wong, H.-S. P. (2012) · Nano Letters · doi:10.1021/nl201040y · Cited by 1,267 · see citing works
Resistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214 · see citing works
Self-citationObservation of conducting filament growth in nanoscale resistive memories
Yang, Y., Gao, P., Gaba, S., Chang, T., Pan, X., & Lu, W. (2012) · Nature Communications · doi:10.1038/ncomms1737 · Cited by 1,208 · see citing works
Self-citationShort-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
Chang, T., Jo, S.-H., & Lu, W. (2011) · ACS Nano · doi:10.1021/nn202983n · Cited by 1,062 · see citing works
Real-Time Computation at the Edge of Chaos in Recurrent Neural Networks
Bertschinger, N., & Natschläger, T. (2004) · Neural Computation · doi:10.1162/089976604323057443 · Cited by 833 · see citing works
Pattern classification by memristive crossbar circuits using ex situ and in situ training
Alibart, F., Zamanidoost, E., & Strukov, D. B. (2013) · Nature Communications · doi:10.1038/ncomms3072 · Cited by 642 · see citing works
Kim, S., Du, C., Sheridan, P., Ma, W., Choi, S., & Lu, W. D. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b00697 · Cited by 603 · see citing works
Everything You Wish to Know About Memristors But Are Afraid to Ask
Chua, L. (2015) · Radioengineering · doi:10.13164/re.2015.0319 · Cited by 481 · see citing works
Du, C., Ma, W., Chang, T., Sheridan, P., & Lu, W. D. (2015) · Advanced Functional Materials · doi:10.1002/adfm.201501427 · Cited by 444 · see citing works
High‐Speed and Low‐Energy Nitride Memristors
Choi, B. J., Torrezan, A. C., Strachan, J. P., Kotula, P. G., Lohn, A. J., Marinella, M. J., Li, Z., Williams, R. S., & Yang, J. J. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600680 · Cited by 356 · see citing works
Self-citationOrigin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches
Menzel, S., Waters, M., Marchewka, A., Böttger, U., Dittmann, R., & Waser, R. (2011) · Advanced Functional Materials · doi:10.1002/adfm.201101117 · Cited by 348 · see citing works
Duan, Q., Jing, Z., Zou, X., Wang, Y., Yang, K., Zhang, T., Wu, S., Huang, R., & Yang, Y. (2020) · Nature Communications · doi:10.1038/s41467-020-17215-3 · Cited by 339 · see citing works
Self-citationIn situ training of feed-forward and recurrent convolutional memristor networks
Wang, Z., Li, C., Lin, P., Rao, M., Nie, Y., Song, W., Qiu, Q., Li, Y., Yan, P., Strachan, J. P., et al. (2019) · Nature Machine Intelligence · doi:10.1038/s42256-019-0089-1 · Cited by 307 · see citing works
Self-citationMemristor, Hodgkin–Huxley, and Edge of Chaos
Chua, L. (2013) · Nanotechnology · doi:10.1088/0957-4484/24/38/383001 · Cited by 253 · see citing works
The decade of the dendritic nmda spike
Antic, S. D., Zhou, W., Moore, A. R., Short, S. M., & Ikonomu, K. D. (2010) · Journal of Neuroscience Research · doi:10.1002/jnr.22444 · Cited by 222 · see citing works
Measuring the switching dynamics and energy efficiency of tantalum oxide memristors
Strachan, J. P., Torrezan, A. C., Medeiros-Ribeiro, G., & Williams, R. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/50/505402 · Cited by 114 · see citing works
Flagged first, then by citations
Research works printed but not linked: 199
- [1]Y. Lecun, Y. Bengio, G. Hinton, Nature 2015, 521, 436. 26017442
- [2]A. Vaswani, N. Shazeer, N. Parmar, J. Uszkoreit, L. Jones, A. N. Gomez, Ł. Kaiser, I. Polosukhin, Adv. Neural. Inf. Process. Syst., Long Beach CA 2017, 5998.
- [3]J. Devlin, M.‐W. Chang, K. Lee, K. Toutanova, arXiv preprint arXiv: 1810.04805, 2018. · arXiv
- [4]Z. Wang, H. Wu, G. W. Burr, C. Hwang, Kang L. Wang, Q. Xia, J. J. Yang, Nat. Rev. Mater. 2020, 5, 173.
- [5]R. Yuan, M. Ma, L. Xu, Z. Zhu, Q. Duan, T. Zhang, Y. Zhu, Y. Wang, R. Huang, Y. Yang, Sci. China Inf. Sci. 2020, 63, 202401.
- [6]M. Prezioso, F. Merrikh-Bayat, B. D. Hoskins, G. C. Adam, K. K. Likharev, D. B. Strukov, Nature 2015, 521, 61. 25951284
- [7]F. Alibart, E. Zamanidoost, D. B. Strukov, Nat. Commun. 2013, 4, 2072. 23797631
- [8]F. M. Bayat, M. Prezioso, B. Chakrabarti, H. Nili, I. Kataeva, D. B. Strukov, Nat. Commun. 2018, 9, 2331. 29899421 PMC5998062
- [9]Z. Wang, S. Joshi, S. Savel'ev, W. Song, R. Midya, Y. Li, M. Rao, P. Yan, S. Asapu, Y. Zhuo, H. Jiang, P. Lin, C. Li, J. H. Yoon, N. K. Upadhyay, J. Zhang, M. Hu, J. P. Strachan, M. Barnell, Q. Wu, H. Wu, R. S. Williams, Q. Xia, J. J. Yang, Nat. Electron. 2018, 1, 137.
- [10]Z. Wang, C. Li, P. Lin, M. Rao, Y. Nie, W. Song, Q. Qiu, Y. Li, P. Yan, J. P. Strachan, N. Ge, N. McDonald, Q. Wu, M. Hu, H. Wu, R. S. Williams, Q. Xia, J. J. Yang, Nat. Mach. Intell. 2019, 1, 434.
- [11]C. Li, Z. Wang, M. Rao, D. Belkin, W. Song, H. Jiang, P. Yan, Y. Li, P. Lin, M. Hu, N. Ge, J. P. Strachan, M. Barnell, Q. Wu, R. S. Williams, J. J. Yang, Q. Xia, Nat. Mach. Intell. 2019, 1, 49.
- [12]Y. Zhou, H. Wu, B. Gao, W. Wu, Y. Xi, P. Yao, S. Zhang, Q. Zhang, H. Qian, Adv. Funct. Mater. 2019, 29, 1900155.
- [13]Y. Jeong, J. Lee, J. Moon, J. H. Shin, W. D. Lu, Nano Lett. 2018, 18, 4447. 29879355
- [14]P. M. Sheridan, F. Cai, C. Du, W. Ma, Z. Zhang, W. D. Lu, Nat. Nanotechnol. 2017, 12, 784. 28530717
- [15]M. A. Zidan, Y. Jeong, J. Lee, B. Chen, S. Huang, M. J. Kushner, W. D. Lu, Nat. Electron. 2018, 1, 411.
- [16]Z. Sun, G. Pedretti, E. Ambrosi, A. Bricalli, P. Wang, D. Ielmini, Proc. Natl. Acad. Sci. U.S.A. 2019, 116, 4123. 30782810 PMC6410822
- [17]S. H. Strogatz, Nonlinear Dynamics and Chaos with Student Solutions Manual: With Applications to Physics, Biology, Chemistry, and Engineering, CRC Press, Boca Raton, FL 2018.
- [18]L. Chua, Nanotechnology 2013, 24, 383001. 23999613
- [19]L. Chua, V. Sbitnev, H. Kim, Int. J. Bifurcat. Chaos 2012, 22, 1250098.
- [20]S. Kumar, R. S. Williams, Z. Wang, Nature 2020, 585, 518. 32968256
- [21]Q. Duan, Z. Jing, X. Zou, Y. Wang, K. Yang, T. Zhang, S. Wu, R. Huang, Y. Yang, Nat. Commun. 2020, 11, 3399. 32636385 PMC7341810
- [22]K. Mainzer, L. Chua, Local Activity Principle: The Cause of Complexity and Symmetry Breaking, Imperial College Press, London 2013.
- [23]A. Ascoli, A. S. Demirkol, R. Tetzlaff, S. Slesazeck, T. Mikolajick, L. Chua, Front. Neurosci. 2021, 15, 233. PMC8095322 33958985
- [24]S. Kumar, J. P. Strachan, R. S. Williams, Nature 2017, 548, 318. 28792931
- [25]Y. Yang, P. Gao, S. Gaba, T. Chang, X. Pan, W. D. Lu, Nat. Commun. 2012, 3, 732. 22415823
- [26]Y. Yang, P. Gao, L. Li, X. Pan, S. Tappertzhofen, S. Choi, R. Waser, I. Valov, W. D. Lu, Nat. Commun. 2014, 5, 4232. 24953477
- [27]S. H. Jo, T. Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, W. D. Lu, Nano Lett. 2010, 10, 1297. 20192230
- [28]R. Waser, M. Aono, Nat. Mater. 2007, 6, 833. 17972938
- [29]L. Chua, IEEE Trans. Circuit Theory 1971, 18, 507.
- [30]L. Chua, Proc. IEEE 2012, 100, 1920.
- [31]D. B. Strukov, G. S. Snider, D. R. Stewart, R. S. Williams, Nature 2008, 453, 80. 18451858
- [32]L. O. Chua, Appl. Phys. A: Mater. Sci. Process. 2011, 102, 765.
- [33]J. Kim, Y. V. Pershin, M. Yin, T. Datta, M. D. Ventra, Adv. Electron. Mater. 2020, 6, 2000010.
- [34]L. Chua, S. M. Kang, Proc. IEEE 1976, 64, 209.
- [35]L. Chua, Radioengineering 2015, 24, 319.
- [36]R. Waser, R. Dittmann, G. Staikov, K. ttt, Adv. Mater. 2009, 21, 2632. 36751064
- [37]A. Sawa, Mater. Today 2018, 11, 28.
- [38]J. J. Yang, D. B. Strukov, D. R. Stewart, Nat. Nanotechnol. 2013, 8, 13. 23269430
- [39]R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 2009, 21, 2632. 36751064
- [40]Y. Yang, R. Huang, Nat. Electron. 2018, 1, 274.
- [41]Y. Yang, X. Zhang, L. Qin, Q. Zeng, X. Qiu, R. Huang, Nat. Commun. 2017, 8, 15173. 28469257 PMC5418605
- [42]J. P. Strachan, A. C. Torrezan, F. Miao, M. D. Pickett, J. J. Yang, W. Yi, G. Medeiros-Ribeiro, R. S. Williams, IEEE Trans. Electron Devices 2013, 20, 2194.
- [43]S. Park, S. Jung, M. Siddik, M. Jo, J. Lee, J. Park, W. Lee, S. Kim, S. M. Sadaf, X. Liu, H. Huang, Phys. Status Solidi RRL 2011, 5, 409.
- [44]K. Baek, S. Park, J. Park, Y. M. Kim, H. Hwang, S. H. Oh, Nanoscale 2017, 9, 582. 27886327
- [45]V. K. Sangwan, D. Jariwala, I. S. Kim, K.‐S. Chen, T. J. Marks, L. J. Lauhon, M. C. Hersam, Nat. Nanotechnol. 2015, 10, 403. 25849785
- [46]A. Azizi, X. Zou, P. Ercius, Z. Zhang, A. Laura Elıas, N. Perea-Lopez, G. Stone, M. Terrones, B. I. Yakobson, N. Alem, Nat. Commun. 2014, 5, 4867. 25202857
- [47]A. A. Bessonov, M. N. Kirikova, D. I. Petukhov, M. Allen, T. Ryheanen, M. J. A. Bailey, Nat. Mater. 2015, 14, 199. 25384168
- [48]J. Zhu, T. Zhang, Y. Yang, R. Huang, Appl. Phys. Rev. 2020, 7, 011312.
- [49]Z. Wang, M. Yin, T. Zhang, Y. Cai, Y. Wang, Y. Yang, R. Huang, Nanoscale 2016, 8, 14015. 27143476
- [50]S. Menzel, M. Waters, A. Marchewka, U. Böttger, R. Dittmann, R. Waser, Adv. Funct. Mater. 2011, 21, 4487.
- [51]K. Fleck, C. La Torre, N. Aslam, S. Hoffmann-Eifert, U. Böttger, S. Menzel, Phys. Rev. Appl. 2016, 6, 064015.
- [52]I. Valov, M. N. Kozicki, J. Phys. D 2013, 46, 074005.
- [53]Z. Wang, S. Joshi, S. E. Savel'ev, H. Jiang, R. Midya, P. Lin, M. Hu, N. Ge, J. P. Strachan, Z. Li, Q. Wu, M. Barnell, G. Li, H. L. Xin, R. S. Williams, Q. Xia, J. J. Yang, Nat. Mater. 2017, 16, 101. 27669052
- [54]S. Raoux, G. W. Burr, M. J. Breitwisch, C. T. Rettner, Y.‐C. Chen, R. M. Shelby, M. Salinga, D. Krebs, S.‐H. Chen, H.‐L. Lung, C. H. Lam, IBM J. Res. Dev. 2008, 52, 465.
- [55]G. W. Burr, M. J. Breitwisch, M. Franceschini, D. Garetto, K. Gopalakrishnan, B. Jackson, B. Kurdi, C. Lam, L. A. Lastras, A. Padilla, B. Rajendran, S. Raoux, R. S. Shenoy, J. Vac. Sci. Technol. B 2010, 28, 223.
- [56]G. W. Burr, M. J. Brightsky, A. Sebastian, H.‐Y. Cheng, J.‐Y. Wu, S. Kim, N. E. Sosa, N. Papandreou, H.‐L. Lung, H. Pozidis, E. Eleftheriou, C. H. Lam, IEEE J. Emerg. Sel. Top. Circuits Syst. 2016, 6, 146.
- [57]M. Wuttig, N. Yamada, Nat. Mater. 2007, 6, 824. 17972937
- [58]Y. Wang, K.‐M. Kang, M. Kim, H.‐S. Lee, R. Waser, D. Wouters, R. Dittmann, J. J. Yang, H.‐H. Park, Mater. Today 2019, 28, 63.
- [59]Z. Shao, X. Cao, H. Luo, P. Jin, NPG Asia Mater. 2018, 10, 581.
- [60]Y. Fang, Z. Wang, C. Cheng, Z. Yu, T. Zhang, Y. Yang, Y. Cai, R. Huang, Sci. China Inf. Sci. 2019, 62, 229401.
- [61]I. Messaris, R. Tetzlaff, A. Ascoli, R. S. Williams, S. Kumar, L. Chua, in IEEE Int. Symp. Circuits and Systems (ISCAS), IEEE, Piscataway, NJ 2020, pp. 329- 332.
- [62]G. A. Gibson, S. Musunuru, J. Zhang, K. Vandenberghe, J. Lee, C.‐C. Hsieh, W. Jackson, Y. Jeon, D. Henze, Z. Li, R. S. Williams, Appl. Phys. Lett. 2016, 108, 023505.
- [63]J. Grollier, D. Querlioz, M. D. Stiles, Proc. IEEE 2016, 104, 2024. PMC5117478 27881881
- [64]J. Grollier, D. Querlioz, K. Y. Camsari, K. Everschor-Sitte, S. Fukami, M. D. Stiles, Nat. Electron. 2020, 3, 360. PMC7754689 33367204
- [65]X. Wang, Y. Chen, H. Xi, H. Li, D. Dimitrov, IEEE Electron Device Lett. 2009, 30, 294.
- [66]M. Romera, P. Talatchian, S. Tsunegi, F. A. Araujo, V. Cros, P. Bortolotti, J. Trastoy, K. Yakushiji, A. Fukushima, H. Kubota, S. Yuasa, M. Ernoult, D. Vodenicarevic, T. Hirtzlin, N. Locatelli, D. Querlioz, J. Grollier, Nature 2018, 563, 230. 30374193
- [67]M. Riou, F. A. Araujo, J. Torrejon, S. Tsunegi, G. Khalsa, D. Querlioz, P. Bortolotti, V. Cros, K. Yakushiji, A. Fukushima, H. Kubota, S. Yuasa, M. D. Stile, J. Grollier, in IEEE Int. Electron Devices Meeting (IEDM), IEEE, Piscataway, NJ 2017, pp. 36.3.1– 36.3.4. PMC6508600 31080272
- [68]J. Torrejon, M. Riou, F. A. Araujo, S. Tsunegi, G. Khalsa, D. Querlioz, P. Bortolotti, V. Cros, K. Yakushiji, A. Fukushima, H. Kubota, S. Yuasa, M. D. Stiles, J. Grollier, Nature 2017, 547, 428. 28748930 PMC5575904
- [69]L. W. Martin, A. M. Rappe, Nat. Rev. Mater. 2016, 2, 16087.
- [70]A. Chanthbouala, V. Garcia, R. O. Cherifi, K. Bouzehouane, S. Fusil, X. Moya, S. Xavier, H. Yamada, C. Deranlot, N. D. Mathur, M. Bibes, A. Barthélémy, J. Grollier, Nat. Mater. 2012, 11, 860. 22983431
- [71]A. I. Khan, A. Keshavarzi, S. Datta, Nat. Electron. 2020, 3, 588.
- [72]C.‐S. Yang, D.‐S. Shang, N. Liu, E. J. Fuller, S. Agrawal, A. A. Talin, Y.‐Q. Li, B.‐G. Shen, Y. Sun, Adv. Funct. Mater. 2018, 28, 1804170.
- [73]J. Zhu, Y. Yang, R. Jia, Z. Liang, W. Zhu, Z. Rehman, L. Bao, X. Zhang, Y. Cai, L. Song, R. Huang, Adv. Mater. 2018, 30, 21. 29665150
- [74]X. Gu, S. S. Iyer, IEEE Electron Device Lett. 2017, 38, 1204.
- [75]T.‐J. Chiu, Y.‐C. King, J. Gong, Y.‐H. Tsai, H. Chen, IEEE Electron Device Lett. 2011, 32, 1293.
- [76]S. Kim, C. Du, P. Sheridan, W. Ma, S.‐H. Choi, W. D. Lu, Nano Lett. 2015, 15, 2203. 25710872
- [77]S. Kim, H. D. Kim, S. J. Choi, Small 2016, 24, 3320. 27152649
- [78]M. Abdelouahab, R. Lozi, L. Chua, Int. J. Bifurcation Chaos 2014, 24, 1430023.
- [79]Y. Pu, Y. Xiao, IEEE Access 2016, 4, 1872.
- [80]E. Wlaźlak, M. Marzec, P. Zawal, K. Szaciłowski, ACS Appl. Mater. Interfaces 2019, 11, 17009. 30986023
- [81]T. Mazur, P. Zawal, K. Szaciłowski, Nanoscale The Royal Society of Chemistry Burlington House, Piccadilly, London, 2019, 11, 1080. 30574642
- [82]E. Wlaźlak, P. Zawal, K. Szaciłowski, ACS Appl. Electron. Mater. 2020, 2, 329. 30986023
- [84]E. R. Kandel, J. H. Schwartz, T. M. Jessell, S. A. Siegelbaum, A. J. Hudspeth, Principles of Neural Science 5th ed., McGraw-Hill, New York 2013.
- [85]A. L. Hodgkin, A. F. Huxley, J. Physiol. 1952, 117, 500. 12991237 PMC1392413
- [86]M. D. Pickett, G. Medeiros-Ribeiro, R. S. Williams, Nat. Mater. 2012, 12, 114. 23241533
- [87]W. Yi, K. K. Tsang, S. K. Lam, X. Bai, J. A. Crowell, E. A. Flores, Nat. Commun. 2018, 9, 4661. 30405124 PMC6220189
- [88]T. Zhang, K. Yang, X. Xu, Y. Cai, Y. Yang, R. Huang, Phys. Status Solidi Rapid Res. Lett. 2019, 13, 1900029.
- [89]J. Lin, Annadi, S. Sonde, C. Chen, L. Stan, K. V. L. V. Achari, S. Ramanathan, S. Guha, in IEEE Int. Electron Devices Meeting (IEDM), IEEE, Piscataway, NJ 2016, pp. 34.5.1– 34.5.4.
- [90]C. Chen, M. Yang, S. Liu, T. Liu, K. Zhu, Y. Zhao, H. Wang, Q. Huang, R. Huang, 2019 IEEE Symposium on VLSI Technology, IEEE, Piscataway, NJ 2019, pp. T136– T137.
- [91]J. Luo, L. Yu, T. Liu, M. Yang, Z. Fu, Z. Liang, L. Chen, C. Chen, S. Liu, S. Wu, Q. Huang, R. Huang, in IEEE Int. Electron Devices Meeting (IEDM), IEEE, Piscataway, NJ 2019, pp. 6.4. 1– 6.4.4.
- [92]Z. Wang, B. Crafton, J. Gomez, R. Xu, A. Luo, Z. Krivokapic, L. Martin, S. Datta, A. Raychowdhury, A. I. Khan, in IEEE Int. Electron Devices Meeting (IEDM), IEEE, Piscataway, NJ 2018, pp. 13.3.1– 13.3.4.
- [93]T. Tuma, A. Pantazi, M. L. Gallo, A. Sebastian, E. Eleftheriou, Nat. Nanotechnol. 2016, 11, 693. 27183057
- [94]L. Bao, J. Zhu, Z. Yu, R. Jia, Q. Cai, Z. Wang, L. Xu, Y. Wu, Y. Yang, Y. Cai, R. Huang, ACS Appl. Mater. Interfaces 2019, 11, 41482. 31597432
- [95]X. Chen, W. Kang, D. Zhu, X. Zhang, N. Lei, Y. Zhan, Y. Zhou, W. Zhao, Nanoscale 2018, 10, 6139. 29557440
- [96]A. N. Burkitt, Biol Cybern. 2006, 95, 1. 16622699
- [97]C. Mead, Analog VLSI and Neural Systems, Addison-Wesley, Reading, MA 1989.
- [98]G. Indiveri, Neural Inf. Process. Lett. Rev. 2007, 11, 135.
- [99]A. Joubert, B. Belhadj, O. Temam, R. Héliot, in The 2012 Int. Joint Conf. on Neural Networks (IJCNN), 2012, pp. 1– 5.
- [100]L. C. Mesa, A. A. Jimenez, T. S. Gotarredona, B. L. BArranco, in IEEE Int. Symp. Circuits and Systems, IEEE, Piscataway, NJ 2008, p. 652.
- [101]A. P. Vaz, S. K. Inati, N. Brunel, K. A. Zaghloul, Science 2019, 363, 975. 30819961 PMC6478623
- [102]A. Schnitzler, J. Gross, Nat. Rev. Neurosci. 2005, 6, 285. 15803160
- [103]J. A. Cardin, M. Carlén, K. s. Meleti s, U. Knoblich, F. Zhang, K. Deisseroth, L.‐H. Tsai, C. I. Moore, Nature 2009, 459, 663. 19396156 PMC3655711
- [104]L. Gao, P.‐Y. Chen, S. Yu, Appl. Phys. Lett. 2017, 111, 103503.
- [105]R. Midya, Z. Wang, S. Asapu, S. Joshi, Y. Li, Y. Zhuo, W. Song, H. Jiang, N. I Upadhay, M. Rao, P. Lin, C. Li, Q. Xia, J. J. Yang, Adv. Electron. Mater. 2019, 5, 1900060.
- [106]X. Zhang, Y. Zhuo, Q. Luo, Z. Wu, R. Midya, Z. Wang, W. Song, R. Wang, N. K. Upadhyay, Y. Fang, F. Kiani, M. Rao, Y. Yang, Q. Xia, Q. Liu, M. Liu, J. J. Yang, Nat. Commun. 2020, 11, 51. 31896758 PMC6940364
- [107]E. M. Izhikevich, Dynamical Systems in Neuroscience, The MIT Press, Cambridge, MA 2007.
- [108]P. Poirazi, A. Papoutsi, Nat. Rev. Neurosci. 2020, 21, 303. 32393820
- [109]J. J. Moore, P. M. Ravassard, D. Ho, L. Acharya, A. L. Kees, C. Vuong, M. R. Mehta, Science 2017, 355, 6331. 28280248
- [110]N. Takahashi, T. G. Oertner, P. Hegemann, M. E. Larkum, Science 2016, 354, 1587. 28008068
- [111]H. Agmon-Snir, C. E. Carr, J. Rinzel, Nature 1998, 393, 268. 9607764
- [112]J. C. Magee, Nat. Rev. Neurosci. 2000, 1, 181. 11257906
- [113]T. Branco, B. A. Clark, M. Häusser, Science 2010, 329, 1671. 20705816 PMC6354899
- [114]S. D. Antic, W.‐L. Zhou, A. R. Moore, S. M. Short, K. D. Ikonomu, J. Neurosci. Res. 2010, 88, 2991. 20544831 PMC5643072
- [115]M. Lavzin, S. Rapoport, A. Polsky, L. Garion, J. Schiller, Nature 2012, 490, 397. 22940864
- [116]X. Li, J. Tang, Q. Zhang, B. Gao, J. Joshua Yang, S. Song, W. Wu, W. Zhang, P. Yao, N. Deng, L. Deng, Y. Xie, H. Qian, H. Wu, Nat. Nanotechnol. 2020, 15, 776. 32601451
- [117]C. J. Wan, L. Q. Zhu, Y. H. Liu, P. Feng, Z. P. Liu, H. L. Cao, P. Xiao, Y. Shi, Q. Wan, Adv. Mater. 2016, 28, 3557. 26972820
- [118]C. J. Wan, L. Q. Zhu, J. M. Zhou, Y. Shi, Q. Wan, Nanoscale 2014, 6, 4491. 24643320
- [119]Y. He, S. Nie, R. Liu, S. Jiang, Y. Shi, Q. Wan, Adv. Mater. 2019, 31, 1900903. 30957923
- [120]J. Pei, L. Deng, S. Song, M. Zhao, Y. Zhang, S. Wu, G. Wang, Z. Zou, Z. Wu, W. He, Nature 2019, 572, 106. 31367028
- [121]D. Verstraeten, B. Schrauwen, M. D'Haene, D. Stroobandt, Neural Netw. 2007, 20, 391. 17517492
- [122]L. Appeltant, M.C. Soriano, G. Van der Sande, J. Danckaert, S. Massar, J. Dambre, B. Schrauwen, C.R. Mirasso, I. Fischer, Nat. Commun. 2011, 2, 468. 21915110 PMC3195233
- [123]C. Du, W. Ma, T. Chang, P. Sheridan, W. D. Lu, Adv. Funct. Mater. Wiley-VCH, Hoboken, New Jersey, 2015, 25, 4290.
- [124]T. Ohno, T. Hasegawa, T. Tsuruoka, K. Terabe, J. K. Gimzewski, M. Aono, Nat. Mater. 2011, 10, 591. 21706012
- [125]T. Chang, S.‐H. Jo, W. Lu, ACS Nano 2011, 5, 7669. 21861506
- [126]S. Kim, C. Du, P. Sheridan, W. Ma, S. Choi, W. D. Lu, Nano Lett. 2015, 15, 2203. 25710872
- [127]Y. Zhong, J. Tang, X. Li, B. Gao, H. Qian, H. Wu, Nat. Commun. 2021, 12, 408. 33462233 PMC7814066
- [128]G. W. Burr, M. J. Brightsky, A. Sebastian, H.‐Y. Cheng, J.‐Y. Wu, S. Kim, N. E. Sosa, N. Papandreou, H.‐L. Lung, H. Pozidis, E. Eleftheriou, C. H. Lam, IEEE J. Emerg. Sel. Top. Circuits Syst. 2016, 6, 146.
- [129]A. Slavin, V. Tiberkevich, IEEE Trans. Magn. 2009, 45, 1875.
- [130]J. Moon, W. Ma, J. H. Shin, F. Cai, C. Du, S. H. Lee, W. D. Lu, Nat. Electron. 2019, 2, 480.
- [131]R. Midya, Z. Wang, S. Asapu, X. Zhang, M. Rao, W. Song, Y. Zhuo, N. Upadhyay, Q. Xia, J. J. Yang, Adv. Intell. Syst. 2019, 1, 1900084.
- [132]G. Tanaka, T. Yamane, J. B. Héroux, R. Nakane, N. Kanazawa, S. Takeda, H. Numata, D. Nakano, A. Hirose, Neural Networks 2019, 115, 100. 30981085
- [133]K. Nakajima, Jpn. J. Appl. Phys. 2020, 59, 060501.
- [134]M. C. Soriano, S. Ortin, L. Keuninckx, L. Appeltant, J. Danckaert, L. Pesquera, G. van der Sande, IEEE Trans. Neural Networks Learn. Syst. 2015, 26, 388. 25608295
- [135]L. Appeltant, G. Sande, J. Danckaert, I. Fischer, Sci. Rep. 2014, 4, 3629. 24406849 PMC3887384
- [136]P. Antonik, Application of FPGA to Real-Time Machine Learning: Hard- ware Reservoir Computers and Software Image Processing, Springer, Melville, NY, 2018.
- [137]P. Antonik, A. Smerieri, F. Duport, M. Haelterman, S. Massar, in 24th Belgian-Dutch Conf. Machine Learning, 2015.
- [138]P. Petre, J. Cruz-Albrecht, in IEEE Int. Conf. on Rebooting Computing (ICRC), IEEE, Piscataway, NJ 2016, pp. 1– 4.
- [139]M. Romera, P. Talatchian, S. Tsunegi, F. A. Araujo, V. Cros, P. Bortolotti, J. Trastoy, K. Yakushiji, A. Fukushima, H. Kubota, S. Yuasa, M. Ernoult, D. Vodenicarevic, T. Hirtzlin, N. Locatelli, D. Querlioz, J. Grollier, Nature 2018, 563, 230. 30374193
- [140]E. Corti, A. Khanna, K. Niang, J. Robertson, K. E. Moselund, B. Gotsmann, S. Datta, S. Karg, IEEE Electron Device Lett. 2020, 42, 629.
- [141]S. Dutta, A. Khanna, W. Chakraborty, J. Gomez, S. Joshi, S. Datta, in 2019 Symp. VLSI Technology, IEEE, Piscataway, NJ 2019, pp. T128- T129.
- [142]S. Dutta, A. Khanna, J. Gomez, K. Ni, Z. Toroczkai, S. Datta, in IEEE Int. Electron Devices Meeting (IEDM), IEEE, Piscataway, NJ 2019, pp. 37.8.1– 37.8.4.
- [143]A. Parihar, N. Shukla, M. Jerry, S. Datta, A. Raychowdhury, Sci. Rep. 2017, 7, 911. 28424457 PMC5430425
- [144]A. Parihar, N. Shukla, S. Datta, A. Raychowdhury, J. Appl. Phys. 2015, 117, 054902.
- [145]J. Liang, R. G. D. Jeyasingh, H. Chen, H.‐P. Wong, in 2011 Symp. on VLSI Technology - Digest of Technical Papers, 2011, pp. 100– 108.
- [146]D. A. McCrea, I. A. Rybak, Brain Res. Rev. 2008, 57, 134. 17936363 PMC2214837
- [147]I. Steuer, P. A. Guertin, Rev. Neurosci. 2019, 30, 107. 30543520
- [148]C. A. Cuellar, J. A. Tapia, V. Juárez, J. Quevedo, P. Linares, L. Martínez, E. Manjarrez, J. Neurosci. 2009, 29, 798. 19158305 PMC6665157
- [149]S. Dutta, A. Parihar, A. Khanna, J. Gomez, W. Chakraborty, M. Jerry, B. Grisafe, A. Raychowdhury, S. Datta, Nat. Commun. 2019, 10, 3299. 31341167 PMC6656780
- [150]J. J. Hopfield, Proc. Natl Acad. Sci. USA 1984, 81, 3088.6587342
- [151]N. Shukla, A. Parihar, M. Cotter, M. Barth, X. Li, N. Chandramoorthy, H. Paik, D. G. Schlom, V. Narayana, A. Raychowdhury, S. Datta, in IEEE Int. Electron Devices Meeting (IEDM), IEEE, Piscataway, NJ 2014, pp. 28.7.1– 28.7.4.
- [152]N. Shukla, W.‐Y. Tsai, M. Jerry, M. Barth, V. Narayanan, S. Datta, in 2016 Symp. VLSI Technology, IEEE, Piscataway, NJ 2016, pp. 1- 2.
- [153]J. H. B. Wijekoon, P. Dudek, Neural Networks 2008, 21, 524. 18262751
- [154]M. Gajek, J. J. Nowak, J. Z. Sun, P. L. Trouilloud, E. J. O'Sullivan, D. W. Abraham, M. C. Gaidis, G. Hu, S. Brown, Y. Zhu, R. P. Robertazzi, W. J. Gallagher, D. C. Worledge, Appl. Phys. Lett. 2012, 100, 132408.
- [155]L. Chen, K. Aihara, Neural Netw. 1995, 8, 915.
- [156]K. Mainzer, L. Chua, Local Activity Principle: The Cause of Complexity and Symmetry Breaking, Imperial College Press, London 2013.
- [157]L. Chua, Int. J. Bifurc. Chaos 2005, 15, 3435.
- [158]M. Itoh, LO. Chua, Int. J. Bifurcat. Chaos 2008, 18, 3183.
- [159]B. Bao, Z. Liu, J. Xu, Electron Lett 2010, 46, 228.
- [160]J. Sun, Y. Shen, Q. Yin, C.J. Xu, Chaos 2013, 23, 013140. 23556977
- [161]C. Li, W. J.‐C. Thio, H. H.‐C. Iu, T. Lu, IEEE Access IEEE, Piscataway, NJ, 2018, 6, 12945.
- [162]B. Bao, Z. Liu, J. Xu, Chin. Phys. B 2010, 19, 030510.
- [163]B. Muthuswamy, L.O. Chua, Int. J. Bif. Chaos 2010, 20, 1567.
- [164]J. Sun, Y. Shen, Optik 2016, 127, 9192.
- [165]S. Kirkpatrick, C. D. Gelatt Jr., M. P. Vecchi, Science 1983, 220, 671. 17813860
- [166]J. H. Shin, Y. J. Jeong, M. A. Zidan, Q. Wang, W. D. Lu, in IEEE Int. Electron Devices Meeting (IEDM), IEEE, Piscataway, NJ 2018, pp. 3.3.1– 3.3.4.
- [167]F. Cai, S. Kumar, T. V. Vaerenbergh, X. Sheng, R. Liu, C. Li, Z. Liu, M. Foltin, S. Yu, Q. Xia, J. J. Yang, R. Beausoleil, W. D. Lu, J. P. Strachan, Nat. Electron. 2020, 3, 409.
- [168]M. R. Mahmoodi, M. Prezioso, D. B. Strukov, Nat. Commun. 2019, 10, 5113. 31704925 PMC6841978
- [169]M. R. Mahmoodi, H. Kim, Z. Fahimi, H. Nili, L. Sedov, V. Polishchuk, D. B. Strukov, in IEEE Int. Electron Devices Meeting (IEDM), IEEE, Piscataway, NJ 2019, 14.7.1– 14.7.4.
- [170]K. Yang, Q. Duan, Y. Wang, T. Zhang, Y. Yang, R. Huang, Sci. Adv. 2020, 6, eaba9901. 32851168 PMC7428342
- [171]Z. Michalewicz, D. B. Fogel, How to Solve It: Modern Heuristics, Springer, Berlin 2013.
- [172]W. Maass, T. Natschläger, H. Markram, Neural Comput. 2002, 14, 2531. 12433288
- [173]A. Rodan, P. Tino, Neural Netw. 2010, 22, 131. 21075721
- [174]H. Jaeger, H. Haas, Science 2004, 304, 5667. 15064413
- [175]D. Verstraeten, B. Schrauwen, M. d'Haene, D. Stroobandt, Neural Netw. 2007, 20, 391. 17517492
- [176]D. Sussillo, L. F. Abbott, Neuron 2009, 63, 544. 19709635 PMC2756108
- [177]N. Bertschinger, T. Natschläger, Neural Comput. 2004, 16, 1413. 15165396
- [178]R. Legenstein, W. Maass, Neural Netw. 2007, 20, 323. 17517489
- [179]X. S. Gao, J. M. Liu, K. Au, J. Y. Dai, Appl. Phys. Lett. 2012, 101, 142905.
- [180]Y. S. Chen, H. Y. Lee, P. S. Chen, P. Y. Gu, C. W. Chen, W. P. Lin, W. H. Liu, Y. Y. Hsu, S. S. Sheu, P. C. Chiang, W. S. Chen, F. T. Chen, C. H. Lien, M.-J. Tsai, in IEEE Int. Electron Devices Meeting (IEDM), IEEE, Piscataway, NJ 2009, p. 105.
- [181]J. P. Strachan, A. C. Torrezan, G. Medeiros-Ribeiro, R. S. Williams, Nanotechnology 2011, 22, 505402. 22108243
- [182]B. J. Choi, A. C. Torrezan, J. P. Strachan, P. G. Kotula, A. J. Lohn, M. J. Marinella, Z. Li, R. S. Williams, J. J. Yang, Adv. Funct. Mater. 2016, 26, 5290.
- [183]M.‐J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hur, Y.‐B. Kim, C.‐J. Kim, D. H. Seo, S. Seo, U.‐I. Chung, I.‐K. Yoo, K. Kim, Nat. Mater. 2011, 10, 625. 21743450
- [185]S. Pi, C. Li, H. Jiang, W. Xia, H. Xin, J. J. Yang, Q. Xia, Nat. Nanotechnol. 2019 14, 35. 30420759
- [186]D. Kuzum, R. G. D. Jeyasingh, B. Lee, H.‐S. Philip Wong, Nano Lett. 2012, 12, 2179. 21668029
- [187]F. Rao, K. Ding, Y. Zhou, Y. Zheng, M. Xia, S. Lv, Z. Song, S. Feng, I. Ronneberger, R. Mazzarello, W. Zhang, E. Ma, Science 2017, 358, 1423. 29123020
- [188]W. Kim, M. BrightSky, T. Masuda, N. Sosa, S. Kim, R. Bruce, F. Carta, G. Fraczak, H. Y. Cheng, A. Ray, Y. Zhu, H. L. Lung, K. Suu, C. Lam, in Electron Devices Meeting (IEDM), IEEE, Piscataway, NJ 2016, pp. 4.2.1– 4.2.4.
- [189]M. Le Gallo, A. Athmanathan, D. Krebs, A. Sebastian, J. Appl. Phys. 2016, 119, 025704.
- [190]F. Xiong, A. D. Liao, D. Estrada, E. Pop, Science 2011, 332, 568. 21393510
- [191]K. L. Wang, J. G. Alzate, P. Khalili Amiri, J Phys D: Appl Phys. 2013, 46, 074003.
- [192]C. Grezes, F. Ebrahimi, J. G. Alzate, X. Cai, J. A. Katine, J. Langer, K. L. Wang, Appl. Phys. Lett. 2016, 108, 012403.
- [193]H. Zhao, B. Glass, P. K. Amiri, A. Lyle, Y. Zhang, Y. J. Chen, G. Rowlands, P. Upadhyaya, Z. Zeng, J. A. Katine, J. Langer, K. Galatsis, H. Jiang, K. L. Wang, I. N. Krivorotov, J. P. Wang, J. Phys. D. Appl. Phys. 2012, 45, 025001.
- [194]Lee, J. J. Kan, S. H. Kang, in Proc. of IEEE/ACM Intl. Symp. on Low Pow. Elec. and Des., 2014, pp. 131– 136.
- [195]S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, H. Ohno, Appl. Phys. Lett. 2008, 93, 082508.
- [196]S. Sakhare, M. Perumkunnil, T. H. Bao, S. Rao, W. Kim, D. Crotti, F. Yasin, S. Couet, J. Swerts, S. Kundu, D. Yakimets, R. Baert, H. R. Oh, A. Spessot, A. Mocuta, G. Sankar Kar, A. Furnemont, in IEEE Int. Electron Devices Meeting (IEDM), IEEE, Piscataway, NJ 2018, pp. 18.3.1– 18.3.4.
- [197]X. Tian, A. Toriumi, in IEEE Int. Electron Devices Meeting (IEDM), IEEE, Piscataway, NJ 2017, p. 36- 64.
- [198]A. Chanthbouala, A. Crassous, V. Garcia, K. Bouzehouane, S. Fusil, X. Moya, J. Allibe, B. Dlubak, J. Grollier, S. Xavier, C. Deranlot, A. Moshar, R. Proksch, N. D. Mathur, M. Bibes, A. Barthelemy, Nat. Nanotechnol. 2012, 7, 101. 22138863
- [199]S. Dunkel, M. Trentzsch, R. Richter, P. Moll, C. Fuchs, O. Gehring, M. Majer, S. Wittek, B. Muller, T. Melde, H. Mulaosmanovic, S. Slesazeck, S. Muller, J. Ocker, M. Noack, D.-A. Lohr, P. Polakowski, J. Muller, T. Mikolajick, J. Hontschel, B. Rice, J. Pellerin, S. Beyer, in Electron Devices Meeting (IEDM), IEEE, Piscataway, NJ 2017, p. 485.
- [200]S. Boyn, S. Girod, V. Garcia, S. Fusil, S. Xavier, C. Deranlot, H. Yamada, C. Carrétéro, E. Jacquet, M. Bibes, A. Barthélémy, J. Grollier, Appl. Phys. Lett. 2014, 104, 052909.
- [201]V. Garcia, S. Fusil, K. Bouzehouane, S. Enouz-Vedrenne, N. D. Mathur, A. Barthélémy, M. Bibes, Nature 2009, 460, 81. 19483675
Cited by
Sorted by citations
Yoon, J. H., Song, Y.-W., Ham, W., Park, J.-M., & Kwon, J.-Y. (2023) · APL Materials · doi:10.1063/5.0149393 · Cited by 74 · see citing works
Park, S.-O., Park, T., Jeong, H., Hong, S., Seo, S., Kwon, Y., Lee, J., & Choi, S. (2023) · Nanoscale Horizons · doi:10.1039/d3nh00121k · Cited by 31 · see citing works
- Authors
- Yang, K., Joshua Yang, J., Huang, R., & Yang, Y.
- Affiliations
- Department of Micro/nanoelectronics Peking University Beijing 100871 China
- Electrical and Computer Engineering Department University of Southern California Los Angeles CA 90089 USA
- Peking University (CN)
- Corresponding author
- Huang, Ru
- Yang, Yuchao
- Venue
- Small Science
- Publisher
- Wiley
- Published
- 2021-09-28
- Volume
- 2
- Issue
- 1
- Pages
- 2100049-2100049
- ISSN
- 2688-4046 (ISSN-L)
- PMC
- PMC11936018
- OpenAlex
- W3201874126
- Cited by
- 151
- References
- 28
- Citations by year
- 2026: 28 · 2025: 28 · 2024: 30 · 2023: 38 · 2022: 25 · 2021: 2
- FWCI
- 6.86
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Licence
- Locations
- Small Science (publishedVersion, cc-by)
- PubMed Central (publishedVersion, cc-by)
- PubMed (publishedVersion)
- DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion)
- Greater South Information System
- Funders
- National Natural Science Foundation of China (61925401, 92064004, 61927901)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Computer Science › Artificial Intelligence › Neural Networks and Reservoir Computing
- Life Sciences › Neuroscience › Cognitive Neuroscience › Neural dynamics and brain function
- Keywords
- memristors, nonlinearity, neuromorphic computing, beyond Moore's law
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review