Measuring the switching dynamics and energy efficiency of tantalum oxide memristors
Abstract
We measured the real-time switching of metal-oxide memristors with sub-nanosecond resolution and recorded the evolution of the current and voltage during both ON (set) and OFF (reset) events. From these we determined the dynamical behavior of the conductivity for different applied bias amplitudes. Quantitative analysis of the energy cost and switching dynamics showed 115 fJ for ON-switching and 13 pJ for OFF-switching when resistance change was limited to 200%. Results are presented that show a favorable scaling with speed in terms of energy cost and reducing unnecessary damage to the devices.
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Charge transport mechanisms and memory effects in amorphous TaN x thin films
Spyropoulos-Antonakakis, N., Sarantopoulou, E., Dražić, G., Kollia, Z., Christofilos, D., Kourouklis, G. A., Palles, D., & Cefalas, A. C. (2013) · Nanoscale Research Letters · doi:10.1186/1556-276x-8-432 · Cited by 10 · see citing works
Impurity stabilization of nanocrystalline grains in pulsed laser deposited tantalum
Donaldson, O. K., Wang, W., Hattar, K., & Trelewicz, J. R. (2017) · Journal of materials research/Pratt's guide to venture capital sources · doi:10.1557/jmr.2017.68 · Cited by 10 · see citing works
Bennett, C. H., Parmar, V., Calvet, L., Klein, J.-O., Suri, M., Marinella, M., & Querlioz, D. (2019) · IEEE Access · doi:10.1109/access.2019.2920076 · Cited by 11 · see citing works
Optimization of Memristive Crossbar Array for Physical Unclonable Function Applications
Khan, M. I., Ali, S., Ikram, A. A., & Bermak, A. (2021) · IEEE Access · doi:10.1109/access.2021.3087810 · Cited by 11 · see citing works
Memristive brain-like computing
Wen, X.-Y., Wang, Y.-S., He, Y., Miao, X., & Hubei Yangtze Memory Laboratories, W. 4. (2022) · Acta Physica Sinica · doi:10.7498/aps.71.20220666 · Cited by 8 · see citing works
RRAM Solutions for Stochastic Computing
Knag, P. C., Gaba, S., Lu, W. D., & Zhang, Z. (2019) · Springer eBooks · doi:10.1007/978-3-030-03730-7_8 · Cited by 8 · see citing works
A Simplified Model of Tantalum Oxide Based Memristor and Application in Memory Crossbars
Mladenov, V., & Kirilov, S. (2021) · International Conference on Modern Circuits and Systems Technologies · doi:10.1109/mocast52088.2021.9493384 · Cited by 8 · see citing works
Thermal Modeling of Resistive Switching Devices
Ramu, A. T., & Strukov, D. B. (2013) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2013.2256138 · Cited by 7 · see citing works
Molnár, D., Török, T. N., Sánta, B., Gubicza, Á., Magyarkuti, A., Hauert, R., Kiss, G. J., Halbritter, A., & Csontos, M. (2018) · Nanoscale · doi:10.1039/c8nr06226a · Cited by 7 · see citing works
Survey on the benefits of using memristors for PUFs
Aljafar, M. J., & Acken, J. M. (2021) · International Journal of Parallel Emergent and Distributed Systems · doi:10.1080/17445760.2021.1972295 · Cited by 6 · see citing works
Coexistence of Bipolar and Unipolar Memristor Switching Behavior
Ghédira, S., Rziga, F. O., Mbarek, K., & Besbes, K. (2019) · IntechOpen eBooks · doi:10.5772/intechopen.85176 · Cited by 6 · see citing works
Pandey, S., & Hull, R. V. (2023) · Applied Physics Letters · doi:10.1063/5.0146248 · Cited by 6 · see citing works
Origin of negative resistance in anion migration controlled resistive memory
Banerjee, W., Wu, F., Hu, Y., Wu, Q., Wu, Z., Liu, Q., & Liu, M. (2018) · Applied Physics Letters · doi:10.1063/1.5021019 · Cited by 6 · see citing works
Modeling of filamentary resistive memory by concentric cylinders with variable conductivity
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Shen, X., Pennycook, T., Hernandez-Martin, D., Pérez, A., Puzyrev, Y., Liu, Y., te Velthuis, S., Freeland, J., Shafer, P., Zhu, C., et al. (2016) · Library Open Repository (Universidad Complutense Madrid) · Cited by 5 · see citing works
Török, T. N., Makk, P., Balogh, Z., Csontos, M., & Halbritter, A. (2023) · ACS Applied Nano Materials · doi:10.1021/acsanm.3c04769 · Cited by 5 · see citing works
Atomic-scale oxygen-vacancy engineering in Sub-2 nm thin Al2O3/MgO memristors
Dodson, B., Goul, R. W., Marshall, A. D., Aafiya, Bray, K. R., Ewing, D., Walsh, M. J., & Wu, J. Z. (2024) · Nano Express · doi:10.1088/2632-959x/ad34a5 · Cited by 5 · see citing works
Mechanism of electrical shorting failure mode in resistive switching
Lohn, A. J., Mickel, P. R., & Marinella, M. J. (2014) · Journal of Applied Physics · doi:10.1063/1.4890635 · Cited by 5 · see citing works
Linearly separable pattern classification using memristive crossbar circuits
Singh, K., Sahu, C., & Singh, J. (2014) · International Symposium on Quality Electronic Design (ISQED) · doi:10.1109/isqed.2014.6783343 · Cited by 5 · see citing works
Characterization, and modeling of memristor devices
Mbarek, K., Rziga, F. O., Ghédira, S., & Besbes, K. (2017) · International Conference on Engineering & MIS (ICEMIS) · doi:10.1109/icemis.2017.8273032 · Cited by 5 · see citing works
Emerging Memory Devices: Assessment and Benchmarking
Marinella, M. J., & Zhirnov, V. V. (2014) · doi:10.1002/9781118958254.ch13 · Cited by 5 · see citing works
Reliability considerations and radiation testing of memristor devices
DeIonno, E., & White, A. L. (2015) · IEEE Aerospace Conference (AERO) · doi:10.1109/aero.2015.7119290 · Cited by 4 · see citing works
The Art and Science of Constructing a Memristor Model: Updated
Kumar, S., Gibson, G. A., Graves, C. E., Pickett, M. D., Strachan, J. P., & Williams, R. S. (2019) · Springer eBooks · doi:10.1007/978-3-319-76375-0_9 · Cited by 3 · see citing works
Self-citationQuasistatic and Pulse Measuring Techniques
Torrezan, A. C., Medeiros‐Ribeiro, G., & Tiedke, S. (2016) · doi:10.1002/9783527680870.ch12 · Cited by 3 · see citing works
Self-citation
- Authors
- Strachan, J. P., Torrezan, A. C., Medeiros-Ribeiro, G., & Williams, R. S.
- Affiliations
- Hewlett-Packard (United States) (US)
- Venue
- Nanotechnology
- Publisher
- IOP Publishing
- Published
- 2011-11-23
- Volume
- 22
- Issue
- 50
- Pages
- 505402
- ISSN
- 0957-4484 (ISSN-L)
- 1361-6528
- OpenAlex
- W2167205991
- Cited by
- 114
- References
- 21
- Citations by year
- 2026: 2 · 2025: 2 · 2024: 5 · 2023: 8 · 2022: 5 · 2021: 9 · 2020: 7 · 2019: 6 · 2018: 2 · 2017: 10 · 2016: 15 · 2015: 12 · 2014: 12 · 2013: 15 · 2012: 4
- FWCI
- 6.94
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Nanotechnology (publishedVersion)
- PubMed (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- tantalum oxide, memristors, switching dynamics, energy efficiency, energy costs
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