Cited by 40Electronic and Structural Properties of OxidesMagnetic and transport properties of perovskites and related materialsSemiconductor materials and devices

High-Quality Epitaxial LaNiO3 Thin Films on SrTiO3(100) and LaAlO3(100)

Sánchez, F., Ferrater, C., Guerrero, C., García-Cuenca, M.V., Varela, M.·2000·Applied Physics A

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Crossref · 10.1007/pl00021092

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  • High quality epitaxial LNO films with resistivity as low as ~100 μOhm·cm can be prepared on single-crystal substrates with similar lattice parameters by MBE, PLD, or PVD.

    “High quality epitaxial LNO films with resistivity as low as ~100 μOhm·cm can be prepared on single-crystal substrates with similar lattice parameters (LaAlO3, SrTiO3) by molecular beam epitaxy (MBE), pulsed laser deposition (PLD), or physical vapor deposition (PVD) [27,28,29,30].”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [30]

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Authors
Sánchez, F., Ferrater, C., Guerrero, C., García-Cuenca, M. V., & Varela, M.
Affiliations
Universitat de Barcelona (ES)
Venue
Applied Physics A
Published
2000-07
Volume
71
Issue
1
Pages
59-64
ISSN
  • 0947-8396 (ISSN-L)
  • 1432-0630
OpenAlex
W2477530472
Cited by
40
References
0
Citations by year
2024: 2 · 2023: 3 · 2022: 1 · 2021: 3 · 2020: 1 · 2019: 2 · 2018: 1 · 2017: 2 · 2016: 1 · 2015: 2 · 2014: 1 · 2013: 1
FWCI
1.69
Type
journal article
Language
en
Open access
closed
Locations
Applied Physics A (publishedVersion)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Magnetic and transport properties of perovskites and related materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Keywords
LaNiO3 thin films, epitaxial growth, SrTiO3(100) substrate, pulsed laser deposition, electrical resistivity, film thickness dependence, critical thickness, surface morphology, crystal quality, substrate temperature, oxygen partial pressure, crack formation

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