Ultra-Flat BaTiO3 Epitaxial Films on Si(001) with Large out-of-Plane Polarization
Abstract
Ferroelectric BaTiO3 is rarely used in monolithic Si devices due to the low quality of BaTiO3 films on Si, as polycrystallinity, degradation of bottom Pt electrodes, low polarization, and high roughness. Here, we overcome these limitations by using a buffer structure that combines yttria-stabilized zirconia, CeO2, and conducting LaNiO3. BaTiO3 films on the multilayered buffer, with total thickness of the buffer below 100 nm, are epitaxial, display remnant polarization of 6–10 μC/cm2, and have roughness of a few Å. These unprecedented properties pave the way to integrate ferroelectric BaTiO3 into Si platforms.
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Crystalline quality and optical properties of BTO epitaxial films critically depend on lattice-substrate matching and the use of buffer thin films to avoid polycrystalline phases.
“where the crystalline quality and optical properties critically depend on lattice-substrate matching and the use of buffer thin films to avoid the formation of polycrystalline phases [213,215].”
From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [215]
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- Authors
- Scigaj, M., Dix, N., Fina, I., Bachelet, R., Warot-Fonrose, B., Fontcuberta, J., & Sánchez, F.
- Affiliations
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) 1 , Campus UAB, Bellaterra 08193, Spain
- Institut de Ciència de Materials de Barcelona (ES)
- Centre National de la Recherche Scientifique (FR)
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2013-03-18
- Volume
- 102
- Issue
- 11
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2021074416
- Cited by
- 65
- References
- 38
- Citations by year
- 2026: 3 · 2025: 5 · 2024: 2 · 2022: 8 · 2021: 3 · 2020: 7 · 2019: 5 · 2018: 5 · 2017: 2 · 2016: 10 · 2015: 8 · 2014: 4 · 2013: 3
- FWCI
- 3.76
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Applied Physics Letters (publishedVersion)
- Funders
- Spanish Ministry of Science and Innovation (MAT2011-29269-C03)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
- Keywords
- barium titanate, ferroelectric thin films, epitaxial thin films, Si(100) substrate, out-of-plane polarization, remnant polarization, film roughness, monolithic integration
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