CoChat
Sign Up
Cited by 79Electronic Packaging and Soldering TechnologiesCopper Interconnects and Reliability3D IC and TSV technologies

The DOI matches its Crossref record.

Growth of Intermetallic Compounds in Thermosonic Copper Wire Bonding on Aluminum Metallization

Xu, Hui, Liu, Changqing, Silberschmidt, Vadim V., Chen, Zhong·2010·Journal of Electronic Materials
DOI 10.1007/s11664-009-0951-8
Open this paper in CoChat — free account

Overview

Integrity signals

Registry

Crossref · 10.1007/s11664-009-0951-8

Cites

Statistics

Recomputing p-values needs the paper’s full text.

Verification

Claims the paper makes

We couldn’t retrieve this paper’s full text, so its claims and self-check weren’t run. The registry and citation checks still apply.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

Citations

Cites

No references could be resolved yet.

Research works printed but not linked: 26

  1. G.G. Harman, Wire Bonding in Microelectronics, Materials, Processes, Reliability, and Yield, 2nd ed. (New York: McGraw-Hill, 1997).
  2. E. Philofsky, Solid State Electron. 13, 1391 (1970). · DOI
  3. G.Y. Jang, J.G. Duh, H. Takahashi, and D. Su, J. Electron. Mater. 35, 323 (2006). · DOI
  4. H. Ji, M. Li, C. Wang, and H.S. Bang, Mater. Sci. Eng. A 447, 111 (2007). · DOI
  5. H.S. Chang, J.X. Pon, K.C. Hsieh, and C.C. Chen, J. Electron. Mater. 30, 1171 (2001). · DOI
  6. S. Murali, J. Alloy Compd. 426, 200 (2006). · DOI
  7. S. Murali, N. Srikanth, and C.J. Vath, Mater. Lett. 58, 3096 (2004). · DOI
  8. N. Srikanth, S. Murali, Y.M. Wong, and C.J. Vath, Thin Solid Films 462–463, 339 (2004). · DOI
  9. S. Murali, N. Srikanth, Y.M. Wong, and C.J. Vath, J. Mater. Sci. 42, 615 (2007). · DOI
  10. C.D. Breach and F. Wulff, Microelectron. Reliab. 44, 973 (2004). · DOI
  11. A. Karpel, G. Gur, Z. Atzmon, and W. Kaplan, J. Mater. Sci. 42, 2334 (2007). · DOI
  12. P. Ratchev, S. Stoukatch, and B. Swinnen, Microelectron. Reliab. 46, 1315 (2006). · DOI
  13. S. Murali, N. Srikanth, and C.J. Vath, Mater. Res. Bull. 38, 637 (2003). · DOI
  14. H.J. Kim, J.Y. Lee, K.W. Paik, K.W. Koh, J.H. Won, S.Y. Choe, J. Lee, J.T. Moon, and Y.J. Park, IEEE Trans. Compon. Packag. Technol. 26, 367 (2003). · DOI
  15. Y. Funamizu and K. Watanabe, Trans. Jpn. Inst. Met. 12, 147 (1971). · DOI
  16. Y. Tamou, J. Li, S.W. Russell, and J.W. Mayer, Nucl. Instrum. Methods B 64, 130 (1992). · DOI
  17. K. Rajan and E.R. Wallach, J. Cryst. Growth 49, 297 (1980). · DOI
  18. J.P. Lokker, A.J. Böttger, W.G. Sloof, F.D. Tichelaar, G.C.A.M. Janssen, and S. Radelaar, Acta Mater. 49, 1339 (2001). · DOI
  19. M. Koberna and J. Fiala, Mater. Sci. Eng. A 159, 231 (1992). · DOI
  20. H. Xu, C. Liu, V.V. Silberschmidt, S.S. Pramana, T.J. White, and Z. Chen, Scripta Mater. 61, 165 (2009). · DOI
  21. J.R. Ho, C.C. Chen, and C.H. Wang, Sens. Actuators A 111, 188 (2004). · DOI
  22. Y.R. Jeng and J.H. Horng, J. Tribol. 123, 725 (2001). · DOI
  23. Y. Tanaka, M. Kajihara, and Y. Watanabe, Mater. Sci. Eng. A 445–446, 355 (2007). · DOI
  24. M. Kajihara, Mater. Sci. Eng. A 403, 234 (2005). · DOI
  25. W.B. Lee, K.S. Bang, and S.B. Jung, J. Alloy Compd. 390, 212 (2005). · DOI · Paper page
  26. M. Braunovic and N. Alexandrov, IEEE Trans. Compon. Packag. Manuf. Technol. 17, 78 (1994). · DOI · Paper page

Cited by

Sorted by citations

See all 79

Metadata

Authors
Xu, H., Liu, C., Silberschmidt, V. V., & Chen, Z.
Affiliations
  • Loughborough University (GB)
  • Nanyang Technological University (SG)
Corresponding author
Xu, Hui
ORCID
Venue
Journal of Electronic Materials
Publisher
Springer Science and Business Media LLC
Published
2009-09-24
Volume
39
Issue
1
Pages
124-131
ISSN
  • 0361-5235 (ISSN-L)
  • 1543-186X
DOI
10.1007/s11664-009-0951-8
OpenAlex
W2096878922
Cited by
79
References
0
Citations by year
2026: 1 · 2025: 2 · 2024: 1 · 2023: 3 · 2022: 1 · 2021: 3 · 2020: 4 · 2019: 3 · 2018: 4 · 2017: 3 · 2016: 6 · 2015: 4 · 2014: 9 · 2013: 12 · 2012: 12
FWCI
6.08
Type
journal article
Language
en
Open access
closed
Licence
www.springer.com/tdm (tdm)
Locations
  • Journal of Electronic Materials (publishedVersion)
  • DR-NTU (Nanyang Technological University) (submittedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Electronic Packaging and Soldering Technologies
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Copper Interconnects and Reliability
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › 3D IC and TSV technologies
Keywords
thermosonic wire bonding, copper wire bonding, aluminum metallization, Cu-Al intermetallic compounds, Cu9Al4, thermal aging, interfacial reaction, intermetallic compound growth kinetics, activation energy, interfacial diffusion, interface evolution

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review