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Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap
Abstract
Highly sensitive phototransistors based on two-dimensional (2D) GaTe nanosheet have been demonstrated. The performance (photoresponsivity, detectivity) of the GaTe nanosheet phototransistor can be efficiently adjusted by using the applied gate voltage. The devices exhibit an ultrahigh photoresponsivity of 274.3 AW −1 . The detectivity of 2D GaTe devices is ∼10 12 Jones, which surpasses that of currently-exploited InGaAs photodetectors (10 11 −10 12 Jones). To reveal the origin of the enhanced photocurrent in GaTe nanosheets, theoretical modeling of the electronic structures was performed to show that GaTe nanosheets also have a direct bandgap structure, which contributes to the promotion of photon absorption and generation of excitons. This work shows that GaTe nanosheets are promising materials for high performance photodetectors.
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Cites
Fine Structure Constant Defines Visual Transparency of Graphene
Nair, R. R., Blake, P., Grigorenko, A. N., Novoselov, K. S., Booth, T. J., Stauber, T., Peres, N. M. R., & Geim, A. K. (2008) · Science · doi:10.1126/science.1156965 · Cited by 9,084
Cited by
Emerging in‐plane anisotropic two‐dimensional materials
Li, L., Han, W., Pi, L., Niu, P., Han, J., Wang, C., Su, B., Li, H., Xiong, J., Bando, Y., et al. (2019) · InfoMat · doi:10.1002/inf2.12005 · Cited by 382
Large‐Size Growth of Ultrathin SnS2 Nanosheets and High Performance for Phototransistors
Zhou, X., Zhang, Q., Gan, L., Li, H., & Zhai, T. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600318 · Cited by 361
Recent Advances in Optoelectronic Devices Based on 2D Materials and Their Heterostructures
Cheng, J., Wang, C., Zou, X., & Liao, L. (2019) · Advanced Optical Materials · doi:10.1002/adom.201800441 · Cited by 359
Huang, W., Gan, L., Yang, H., Zhou, N., Wang, R., Wu, W., Li, H., Ma, Y., Zeng, H., & Zhai, T. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201702448 · Cited by 267
Metadata
- Authors
- Hu, P., Zhang, J., Yoon, M., Qiao, X.-F., Zhang, X., Feng, W., Tan, P., Zheng, W., Liu, J., Wang, X., Idrobo, J. C., Geohegan, D. B., & Xiao, K.
- Venue
- Nano Research
- Publisher
- Tsinghua University Press
- Published
- 2014-04-23
- Volume
- 7
- Issue
- 5
- Pages
- 694-703
- ISSN
- 1998-0000 (ISSN-L)
- 1998-0124
- OpenAlex
- W1998379105
- Cited by
- 174
- References
- 1
- FWCI
- 8.19
- Type
- journal article
- Language
- en
- Open access
- closed
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- Hu, P., Zhang, J., Yoon, M., Qiao, X.-F., Zhang, X., Feng, W., Tan, P., Zheng, W., Liu, J., Wang, X., Idrobo, J. C., Geohegan, D. B., & Xiao, K. (2014). Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap. Nano Research. https://doi.org/10.1007/s12274-014-0430-2
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