The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Two-dimensional semiconductors with possible high room temperature mobility
Open accessAbstract
We have calculated the longitudinal acoustic phonon limited electron mobility of 14 two-dimensional semiconductors with composition of MX 2, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by the deformation potential approximation. We found that out of 14 compounds, MoTe2, HfSe2 and ZrSe2 are promising regarding to their possible high mobility and finite band gap. The phonon limited mobility can be above 2,500 cm2·V−1·s−1 at room temperature.
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Cites
Generalized Gradient Approximation Made Simple
Perdew, J. P., Burke, K., & Ernzerhof, M. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.3865 · Cited by 215,824
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.216802 · Cited by 2,033 · cited 1×
“It is possible to open a gap at the Dirac cone, but usually the gap is tiny, and required extra parameters, for example, external electric fields [5], which is not easy to fully integrate it with present semiconductor processes.”
Background
Cited by
Wide Band Gap Chalcogenide Semiconductors
Woods-Robinson, R., Han, Y., Zhang, H., Ablekim, T., Khan, I., Persson, K. A., & Zakutayev, A. (2020) · Chemical Reviews · doi:10.1021/acs.chemrev.9b00600 · Cited by 513
Analyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors
Yu, Z., Ong, Z., Li, S., Xu, J., Zhang, G., Zhang, Y., Shi, Y., & Wang, X. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201604093 · Cited by 426
Li, H., Li, Y., Aljarb, A., Shi, Y., & Li, L.-J. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00212 · Cited by 382
Self-citationControlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition
Zhou, J., Zeng, Q., Lv, D., Sun, L., Niu, L., Fu, W., Liu, F., Shen, Z., Jin, C., & Liu, Z. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b01590 · Cited by 308
Metadata
- Authors
- Zhang, W., Huang, Z., Zhang, W., & Li, Y.
- Venue
- Nano Research
- Publisher
- Tsinghua University Press
- Published
- 2014-09-03
- Volume
- 7
- Issue
- 12
- Pages
- 1731-1737
- ISSN
- 1998-0000 (ISSN-L)
- 1998-0124
- OpenAlex
- W2055417321
- Cited by
- 826
- References
- 2
- FWCI
- 15.78
- Type
- journal article
- Language
- en
- Open access
- green
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- Zhang, W., Huang, Z., Zhang, W., & Li, Y. (2014). Two-dimensional semiconductors with possible high room temperature mobility. Nano Research. https://doi.org/10.1007/s12274-014-0532-x
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