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Cryogenic low noise 2.2–3GHz amplifier
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III-V direct band gap semiconductor devices like Ga-As based pHEMTs are one of the most preferred choices for developing cryogenic amplifiers.
“whereas III-V direct band gap semiconductor devices like Ga-As based pHEMTs are one of the most preferred choice for developing cryogenic amplifiers [12-28].”
From Development and Characterization of a Cryogenic Tuned Amplifier for Penning Trap Applications (2025) · cites this paper as [21]
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References 9 · Cited by 4
Research works printed but not linked: 7
- Pospieszalski, 1989, Modeling of noise parameters of MESFET’s and MODFET’s and their frequency and temperature dependence, IEEE Trans Microwave Theor Technol, 37, 1340, 10.1109/22.32217 · DOI
- Pospieszalski M, Wollack E. Characteristics of broadband INP HFET millimeter-wave amplifiers and their applications in radioastronomy receivers. In: Topical symposium on millimeter waves, 1997; 1997. p. 143–6. doi:10.1109/TSMW.1997.702491. · DOI
- Oukhanski, 2003, Low noise, low power consumption high electron mobility transistors amplifier, for temperatures below 1K, Rev Sci Instrum, 74, 1145, 10.1063/1.1532539 · DOI · Paper page
- Roschier, 2004, Design of cryogenic 700MHz amplifier, Cryogenics, 44, 783, 10.1016/j.cryogenics.2004.04.006 · DOI
- Angelov, 2002, Microwave theory and techniques, IEEE Trans Microwave Theor Technol, 50, 1480, 10.1109/TMTT.2002.1006408 · DOI
- McGrath, 1986, Variable-temperature loads for use in accurate noise measurements of cryogenically-cooled microwave amplifiers and mixers, Int J Infrared Millimeter Waves, 7, 543, 10.1007/BF01013276 · DOI
- Boutez, 1997, A low-noise cryogenically-cooled 8–12GHz HEMT amplifier for future space applications, Int J Infrared Millimeter Waves, 18, 85, 10.1007/BF02677898 · DOI
Metadata
- Authors
- Neilinger, P., Trgala, M., & Grajcar, M.
- Affiliations
- Comenius University Bratislava (SK)
- Venue
- Cryogenics
- Publisher
- Elsevier BV
- Published
- 2012-07
- Volume
- 52
- Issue
- 7-9
- Pages
- 362-365
- ISSN
- 0011-2275 (ISSN-L)
- OpenAlex
- W1964142613
- Cited by
- 4
- References
- 9
- Citations by year
- 2025: 1 · 2020: 1 · 2019: 1 · 2017: 1
- FWCI
- 0.00
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Cryogenics (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Superconducting and THz Device Technology
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radio Frequency Integrated Circuit Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Microwave Engineering and Waveguides
- Keywords
- cryogenic amplifiers, low noise amplifier, noise temperature, microwave circuit design, cryogen-free operation, low-power amplifier
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