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Cited by 38Electronic Packaging and Soldering Technologies3D IC and TSV technologiesCopper Interconnects and Reliability

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Cu-Al interfacial formation and kinetic growth behavior during HTS reliability test

Liu, Chien-Pan, Chang, Shoou-Jinn, Liu, Yen-Fu, Chen, Wei-Shou·2019·Journal of Materials Processing Technology
DOI 10.1016/j.jmatprotec.2018.12.012
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Research works printed but not linked: 46

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Metadata

Authors
Liu, C.-P., Chang, S.-J., Liu, Y.-F., & Chen, W.-S.
Affiliations
National Cheng Kung University (TW)
Corresponding author
Liu, Chien-Pan
ORCID
Chang, Shoou-Jinn
Venue
Journal of Materials Processing Technology
Publisher
Elsevier BV
Published
2019-05
Volume
267
Pages
90-102
ISSN
0924-0136 (ISSN-L)
DOI
10.1016/j.jmatprotec.2018.12.012
OpenAlex
W2904729369
Cited by
38
References
0
Citations by year
2026: 4 · 2025: 8 · 2024: 8 · 2023: 5 · 2022: 3 · 2021: 3 · 2020: 4 · 2019: 3
FWCI
0.96
Type
journal article
Language
en
Open access
closed
Licence
www.elsevier.com/tdm/userlicense/1.0/ (tdm)
Locations
Journal of Materials Processing Technology (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Electronic Packaging and Soldering Technologies
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › 3D IC and TSV technologies
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Copper Interconnects and Reliability
Keywords
Cu-Al intermetallic compounds, intermetallic compound growth, activation energy, CuAl2, CuAl, Cu9Al4, annealing, ball shear test

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CoChat. (2026). Citation check: Cu-Al interfacial formation and kinetic growth behavior during HTS reliability test. https://app.cochat.ai/papers/10.1016/j.jmatprotec.2018.12.012
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Liu, C.-P., Chang, S.-J., Liu, Y.-F., & Chen, W.-S. (2019). Cu-Al interfacial formation and kinetic growth behavior during HTS reliability test. Journal of Materials Processing Technology. https://doi.org/10.1016/j.jmatprotec.2018.12.012