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Cited by 56Electronic Packaging and Soldering TechnologiesCopper Interconnects and Reliability3D IC and TSV technologies

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Investigation of growth behavior of Al–Cu intermetallic compounds in Cu wire bonding

Chen, Jiunn, Lai, Yi-Shao, Wang, Yi-Wun, Kao, C.R.·2011·Microelectronics Reliability
DOI 10.1016/j.microrel.2010.09.034
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Metadata

Authors
Chen, J., Lai, Y.-S., Wang, Y.-W., & Kao, C. R.
Affiliations
  • Advanced Semiconductor Engineering (Taiwan) (TW)
  • National Taiwan University (TW)
Corresponding author
Chen, Jiunn
ORCID
Venue
Microelectronics Reliability
Publisher
Elsevier BV
Published
2011-01
Volume
51
Issue
1
Pages
125-129
ISSN
0026-2714 (ISSN-L)
DOI
10.1016/j.microrel.2010.09.034
OpenAlex
W2000264894
Cited by
56
References
0
Citations by year
2026: 2 · 2025: 3 · 2024: 6 · 2023: 5 · 2022: 4 · 2021: 3 · 2020: 1 · 2018: 6 · 2017: 3 · 2016: 7 · 2015: 4 · 2014: 5 · 2013: 2 · 2012: 4
FWCI
1.77
Type
journal article
Language
en
Open access
closed
Licence
www.elsevier.com/tdm/userlicense/1.0/ (tdm)
Locations
Microelectronics Reliability (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Electronic Packaging and Soldering Technologies
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Copper Interconnects and Reliability
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › 3D IC and TSV technologies
Keywords
copper wire bonding, intermetallic compound formation, AlCu, Al4Cu9, Al2Cu, formation energy, debonding

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CoChat. (2026). Citation check: Investigation of growth behavior of Al–Cu intermetallic compounds in Cu wire bonding. https://app.cochat.ai/papers/10.1016/j.microrel.2010.09.034
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Chen, J., Lai, Y.-S., Wang, Y.-W., & Kao, C. R. (2011). Investigation of growth behavior of Al–Cu intermetallic compounds in Cu wire bonding. Microelectronics Reliability. https://doi.org/10.1016/j.microrel.2010.09.034