The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Contact resistance in graphene-based devices
Open accessAbstract
We report a systematic study of the total contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on many different graphene flakes we demonstrate that the contact resistance consists of a gate independent and a gate dependent part. We show that quantitatively the gate independent part of the contact resistance is the same for single-, bi-, and tri-layer graphene. We argue that this is the result of charge transfer from the metal, causing the Fermi level in the graphene region under the contacts to shift far away from the charge neutrality point.
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Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Chiral tunnelling and the Klein paradox in graphene
Katsnelson, M. I., Novoselov, K. S., & Geim, A. K. (2006) · Nature Physics · doi:10.1038/nphys384 · Cited by 3,896
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.216802 · Cited by 2,033
Asymmetry gap in the electronic band structure of bilayer graphene
McCann, E. (2006) · Physical Review B · doi:10.1103/physrevb.74.161403 · Cited by 1,275
Cited by
The origins and limits of metal–graphene junction resistance
Xia, F., Perebeinos, V., Lin, Y.-M., Wu, Y., & Avouris, P. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2011.6 · Cited by 832
Graphene-Silicon Schottky Diodes
Chen, C.-C., Aykol, M., Chang, C.-C., Levi, A. F. J., & Cronin, S. B. (2011) · Nano Letters · doi:10.1021/nl104364c · Cited by 485
Selective Gas Sensing with a Single Pristine Graphene Transistor
Rumyantsev, S., Liu, G., Shur, M. S., Potyrailo, R. A., & Balandin, A. A. (2012) · Nano Letters · doi:10.1021/nl3001293 · Cited by 408
Metadata
- Authors
- Russo, S., Craciun, M. F., Yamamoto, M., Morpurgo, A. F., & Tarucha, S.
- Venue
- Physica E: Low-dimensional Systems and Nanostructures
- Publisher
- Elsevier BV
- Published
- 2010-02
- Volume
- 42
- Issue
- 4
- Pages
- 677-679
- ISSN
- 1386-9477 (ISSN-L)
- OpenAlex
- W2026435243
- Cited by
- 202
- References
- 4
- FWCI
- 9.09
- Type
- journal article
- Language
- en
- Open access
- green
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- Russo, S., Craciun, M. F., Yamamoto, M., Morpurgo, A. F., & Tarucha, S. (2010). Contact resistance in graphene-based devices. Physica E: Low-dimensional Systems and Nanostructures. https://doi.org/10.1016/j.physe.2009.11.080
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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