Preparation of LaNiO3 Thin Films with Very Low Room-Temperature Electrical Resistivity by Room Temperature Sputtering and High Oxygen-Pressure Processing
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The resistivity of LNO films can vary from 100 to 10,000 μOhm·cm, depending on preparation techniques.
“The resistivity of LNO films can vary from 100 to 10,000 μOhm·cm, depending on preparation techniques [23,24,25,26].”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [26]
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Duan, Z., Cui, Y., Yang, Z., Li, K., Wan, Y., Lu, Z., Xie, Y., & Zhang, J. (2018) · Ceramics International · doi:10.1016/j.ceramint.2017.09.230 · Cited by 32 · see citing works
Control of Columnar Grain Microstructure in CSD LaNiO3 Films
Atanova, A. V., Seregin, D. S., Zhigalina, O. M., Khmelenin, D. N., Orlov, G. A., Turkina, D. I., Sigov, A. S., & Vorotilov, K. A. (2023) · Molecules · doi:10.3390/molecules28041938 · Cited by 5 · see citing works
- Authors
- Zhang, X. D., Meng, X. J., Sun, J. L., Lin, T., Ma, J. H., Chu, J. H., Kwon, D. Y., Kim, C. W., & Kim, B. G.
- Affiliations
- Chinese Academy of Sciences (CN)
- Pusan National University (KR)
- Corresponding author
- Zhang, X.D.
- Venue
- Thin Solid Films
- Publisher
- Elsevier BV
- Published
- 2008-01
- Volume
- 516
- Issue
- 6
- Pages
- 919-924
- ISSN
- 0040-6090 (ISSN-L)
- OpenAlex
- W2034262898
- Cited by
- 17
- References
- 0
- Citations by year
- 2023: 1 · 2021: 1 · 2019: 1 · 2017: 2 · 2016: 1 · 2015: 1 · 2013: 1
- FWCI
- 1.66
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Thin Solid Films (publishedVersion)
- Funders
- National Natural Science Foundation of China
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Magnetic and transport properties of perovskites and related materials
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Keywords
- LaNiO3 thin films, room-temperature sputtering, rhombohedral phase, post-annealing, ferroelectricity, (100) orientation
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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
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