Cited by 32Electronic and Structural Properties of OxidesMagnetic and transport properties of perovskites and related materialsSemiconductor materials and devices

Growth of highly c-axis oriented LaNiO3 films with improved surface morphology on Si substrate using chemical solution deposition and rapid heat treatment process

Duan, Zongfan, Cui, Ying, Yang, Zhu, Li, Kang, Wan, Yuhui, Lu, Zhengxin, Xie, Yuntao, Zhang, Jingyu·2018·Ceramics International

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Crossref · 10.1016/j.ceramint.2017.09.230

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33 of 33 references verified0 citation errors · 0 not checkable

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  • Some authors have demonstrated a columnar grain structure of LNO films using PLD and CSD techniques.

    “Some authors have demonstrated a columnar grain structure of LNO films using PLD [29] and CSD [15,22,40] techniques.”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [15]

  • CSD is widely used for deposition of LNO films on substrates of various materials, size, and shape, including standard silicon wafers.

    “For this reason, chemical solution deposition (CSD) is widely used for the deposition of LNO films on substrates of various materials, size, and shape, including standard silicon wafers [15,19,31].”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [15]

  • Interplanar distances 2.43 and 1.46 Å may indicate presence of residual amount of NiO, while 3.27 and 1.68 Å correspond to La2O3 often observed in LNO films obtained by CSD.

    “Interplanar distances of 2.43 Å and 1.46 Å may indicate the presence of a residual amount of NiO (s.g. Fm3¯m, ICSD ID 9866, d = 2.43 and 1.49 Å), while 3.27 Å and 1.68 Å correspond to La2O3 (s.g. Ia3¯, PDF 00-022-0369, d= 3.27, 1.70, 1.66 Å), often observed in LNO films obtained by CSD [15,57,58].”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [15]

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Authors
Duan, Z., Cui, Y., Yang, Z., Li, K., Wan, Y., Lu, Z., Xie, Y., & Zhang, J.
Affiliations
Xi'an University of Technology (CN)
Corresponding author
Duan, Zongfan
Venue
Ceramics International
Publisher
Elsevier BV
Published
2018-01
Volume
44
Issue
1
Pages
695-702
ISSN
0272-8842 (ISSN-L)
OpenAlex
W2758159442
Cited by
32
References
33
Citations by year
2026: 5 · 2025: 7 · 2024: 3 · 2023: 2 · 2022: 5 · 2021: 5 · 2020: 1 · 2019: 4
FWCI
0.58
Type
journal article
Language
en
Open access
closed
Locations
Ceramics International (publishedVersion)
Funders
  • National Natural Science Foundation of China (61404107, 51372198)
  • China Postdoctoral Fund (2013M542368)
  • Scientific Research Foundation for the Returned Overseas Chinese Scholars of State Education Ministry (Duan Zongfan)
  • Scientific Research Fund of the Department of Education (15JK1526)
  • Key Laboratory Project (14JS066)
  • Opening Project of Material Corrosion and Protection Key Laboratory of Sichuan Province (2016CL09)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Magnetic and transport properties of perovskites and related materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Keywords
LaNiO3 thin films, c-axis orientation, silicon substrate, chemical solution deposition, rapid heat treatment, surface morphology, precursor solution composition, perovskite oxides, electrical resistivity, seed layer, bottom electrode

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