Some effects of oxygen impurities on AlN and GaN
Integrity signals
Registry
Cites
Statistics
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
Some debate exists on the importance of isotope scattering in gallium-based semiconductors, though authors agree that it is diminished at high temperatures.
“Some debate exists on the importance of isotope scattering in gallium-based semiconductors, though authors agree that it is diminished at high temperatures31383940.”
From Universal phonon mean free path spectra in crystalline semiconductors at high temperature (2013) · cites this paper as [39]
Cited by
Sorted by citations
Thermal Conductivity and Large Isotope Effect in GaN from First Principles
Lindsay, L., Broido, D. A., & Reinecke, T. L. (2012) · Physical Review Letters · doi:10.1103/physrevlett.109.095901 · Cited by 307 · see citing works
Accurate dependence of gallium nitride thermal conductivity on dislocation density
Mion, C., Muth, J. F., Preble, E. A., & Hanser, D. (2006) · Applied Physics Letters · doi:10.1063/1.2335972 · Cited by 228 · see citing works
Zheng, Q., Li, C., Rai, A., Leach, J. H., Broido, D. A., & Cahill, D. G. (2019) · Physical Review Materials · doi:10.1103/physrevmaterials.3.014601 · Cited by 177 · see citing works
Universal phonon mean free path spectra in crystalline semiconductors at high temperature
Freedman, J. P., Leach, J. H., Preble, E. A., Sitar, Z., Davis, R. F., & Malen, J. A. (2013) · Scientific Reports · doi:10.1038/srep02963 · Cited by 171 · see citing works
- Authors
- Slack, G. A., Schowalter, L. J., Morelli, D., & Freitas, J. A.
- Affiliations
- Rensselaer Polytechnic Institute (US)
- Aptiv (United States) (US)
- United States Naval Research Laboratory (US)
- Corresponding author
- Schowalter, Leo J.
- Venue
- Journal of Crystal Growth
- Publisher
- Elsevier BV
- Published
- 2002-12
- Volume
- 246
- Issue
- 3-4
- Pages
- 287-298
- ISSN
- 0022-0248 (ISSN-L)
- OpenAlex
- W2004157914
- Cited by
- 415
- References
- 0
- Citations by year
- 2026: 11 · 2025: 22 · 2024: 24 · 2023: 19 · 2022: 16 · 2021: 20 · 2020: 20 · 2019: 24 · 2018: 19 · 2017: 20 · 2016: 14 · 2015: 13 · 2014: 17 · 2013: 17 · 2012: 18
- FWCI
- 10.07
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Crystal Growth (publishedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Biomedical Engineering › Acoustic Wave Resonator Technologies
- Keywords
- oxygen impurities, aluminum nitride, gallium nitride, substitutional impurities, luminescence, optical absorption, thermal conductivity, crystal defects
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
