Accurate dependence of gallium nitride thermal conductivity on dislocation density

Mion, C.; Muth, J. F.; Preble, E. A.; Hanser, D.

doi:10.1063/1.2335972

Cited by 228Thermal properties of materialsGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Accurate dependence of gallium nitride thermal conductivity on dislocation density

Mion, C., Muth, J. F., Preble, E. A., Hanser, D.·2006·Applied Physics Letters

DOI 10.1063/1.2335972

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Abstract

The authors experimentally find that the thermal conductivity of gallium nitride depends critically on dislocation density using the 3-omega technique. For GaN with dislocation densities lower than 106cm−2, the thermal conductivity is independent with dislocation density. The thermal conductivity decreases with a logarithmic dependence for material with dislocation densities in the range of 107–1010cm−2. These results are in agreement with theoretical predictions. This study indicates that the hydride vapor phase epitaxy method offers an attractive route for the formation of semi-insulating gallium nitride with optimal thermal conductivity values around 230W∕mK and very low dislocation density near 5×104cm−2.

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The bulk thermal conductivity of GaN at T = 300 K is 230 W/mK.
“The bulk thermal conductivities of GaAs, GaN, AlN, and SiC (4H and 6H) at T = 300 K are 501213, 2301415, 28516, and 490 Wm−1K−11718, respectively.”
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Temperature and Dislocation Density Effects on the Thermal Conductivity of Bulk Gallium Nitride
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Authors: Mion, C., Muth, J. F., Preble, E. A., & Hanser, D.
Affiliations: North Carolina State University (US)
Kyma Technologies (United States) (US)
ORCID: Muth, J. F.
Preble, E. A.
Venue: Applied Physics Letters
Publisher: AIP Publishing
Published: 2006-08-28
Volume: 89
Issue: 9
ISSN: 0003-6951 (ISSN-L)
1077-3118
DOI: 10.1063/1.2335972
OpenAlex: W2046280597
Cited by: 228
References: 21
Citations by year: 2026: 8 · 2025: 19 · 2024: 12 · 2023: 9 · 2022: 17 · 2021: 19 · 2020: 25 · 2019: 19 · 2018: 12 · 2017: 10 · 2016: 8 · 2015: 9 · 2014: 8 · 2013: 13 · 2012: 13
FWCI: 3.06
Type: journal article
Language: en
Open access: closed
Locations: Applied Physics Letters (publishedVersion)
Topics: Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
Keywords: gallium nitride, thermal conductivity, dislocation density, semi-insulating GaN, hydride vapor phase epitaxy, logarithmic dependence, crystal defects

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Accurate dependence of gallium nitride thermal conductivity on dislocation density

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