Student or educator? Sign up with your school email and get 6 months of Pro free.
Cited by 665

The DOI matches its Crossref record; 20 of the 20 references it cites were found in a registry or an index.

Magnetic tunnel junctions

Open access
Zhu, Jian-Gang (Jimmy), Park, Chando·2006·Materials Today

Abstract

Fueled by the ever-increasing demand for larger hard disk drive storage capacities, extensive research over the past decade has resulted in the development of AlOx- and TiOx-based magnetic tunnel junctions that exhibit a large magnetoresistive effect at room temperature. As their commercialization in various applications begins, a new type of magnetic tunnel junction with a crystalline MgO tunnel barrier has emerged that shows a much larger room-temperature magnetoresistive effect. We present a brief overview of the development of magnetic tunnel junctions, introducing the underlying physics. We also discuss two important commercial applications: read sensors in hard disk drives and memory elements in magnetoresistive random access memory. An emphasis is placed on the material aspects of magnetic tunnel junctions.

Overview

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Integrity signals

Registry

Crossref · 10.1016/s1369-7021(06)71693-5

Cites

20 of 20 references verified0 citation errors · 0 not checkable

Statistics

Verification

Claims the paper makes

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Self-check

Percentages, sums and reported differences re-computed from the paper’s own numbers.

The self-check needs the paper’s full text.

Citations

Cites

Show all 20 references

Cited by

See all 665

Metadata

Authors
Zhu, J.-G. (., & Park, C.
Venue
Materials Today
Publisher
Elsevier BV
Published
2006-11
Volume
9
Issue
11
Pages
36-45
ISSN
1369-7021 (ISSN-L)
OpenAlex
W1995884161
Cited by
665
References
20
FWCI
16.75
Type
journal article
Language
en
Open access
hybrid

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

How to cite

Cite CoChat for the checks on this page, and the paper for its own findings.

This page
CoChat. (2026). Citation check: Magnetic tunnel junctions. https://app.cochat.ai/papers/10.1016/s1369-7021(06)71693-5
The paper
Zhu, J.-G. (., & Park, C. (2006). Magnetic tunnel junctions. Materials Today. https://doi.org/10.1016/s1369-7021(06)71693-5

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.