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Magnetic tunnel junctions
Open accessAbstract
Fueled by the ever-increasing demand for larger hard disk drive storage capacities, extensive research over the past decade has resulted in the development of AlOx- and TiOx-based magnetic tunnel junctions that exhibit a large magnetoresistive effect at room temperature. As their commercialization in various applications begins, a new type of magnetic tunnel junction with a crystalline MgO tunnel barrier has emerged that shows a much larger room-temperature magnetoresistive effect. We present a brief overview of the development of magnetic tunnel junctions, introducing the underlying physics. We also discuss two important commercial applications: read sensors in hard disk drives and memory elements in magnetoresistive random access memory. An emphasis is placed on the material aspects of magnetic tunnel junctions.
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Cites
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Rational Design of Flexible Two-Dimensional MXenes with Multiple Functionalities
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The promise of spintronics for unconventional computing
Finocchio, G., Di Ventra, M., Camsari, K. Y., Everschor-Sitte, K., Khalili Amiri, P., & Zeng, Z. (2021) · Journal of Magnetism and Magnetic Materials · doi:10.1016/j.jmmm.2020.167506 · Cited by 173
Growth of NiO nanorods, SiC nanowires and monolayer graphene via a CVD method
You, Y., Mayyas, M., Xu, S., Mansuri, I., Gaikwad, V., Munroe, P., Sahajwalla, V., & Joshi, R. K. (2017) · Green Chemistry · doi:10.1039/c7gc02523h · Cited by 41
Simulating the fabrication of aluminium oxide tunnel junctions
Cyster, M. J., Smith, J. S., Vogt, N., Opletal, G., Russo, S. P., & Cole, J. H. (2021) · npj Quantum Information · doi:10.1038/s41534-020-00360-4 · Cited by 34
Metadata
- Authors
- Zhu, J.-G. (., & Park, C.
- Venue
- Materials Today
- Publisher
- Elsevier BV
- Published
- 2006-11
- Volume
- 9
- Issue
- 11
- Pages
- 36-45
- ISSN
- 1369-7021 (ISSN-L)
- OpenAlex
- W1995884161
- Cited by
- 665
- References
- 20
- FWCI
- 16.75
- Type
- journal article
- Language
- en
- Open access
- hybrid
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