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Controlled Generation of a p–n Junction in a Waveguide Integrated Graphene Photodetector

Open access
Schuler, Simone, Schall, Daniel, Neumaier, Daniel, Dobusch, Lukas, Bethge, Ole, Schwarz, Benedikt, Krall, Michael, Mueller, Thomas·2016·Nano Letters

Abstract

With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in graphene photodetectors have been studied extensively in the past years. However, the knowledge about efficient light conversion at graphene p-n junctions has not yet been translated into high-performance devices. Here, we present a graphene photodetector integrated on a silicon slot-waveguide, acting as a dual gate to create a p-n junction in the optical absorption region of the device. While at zero bias the photothermoelectric effect is the dominant conversion process, an additional photoconductive contribution is identified in a biased configuration. Extrinsic responsivities of 35 mA/W, or 3.5 V/W, at zero bias and 76 mA/W at 300 mV bias voltage are achieved. The device exhibits a 3 dB bandwidth of 65 GHz, which is the highest value reported for a graphene-based photodetector.

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Metadata

Authors
Schuler, S., Schall, D., Neumaier, D., Dobusch, L., Bethge, O., Schwarz, B., Krall, M., & Mueller, T.
Venue
Nano Letters
Published
2016-10-11
Volume
16
Issue
11
Pages
7107-7112
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2529271820
Cited by
205
References
4
FWCI
10.04
Type
journal article
Language
en
Open access
green

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Schuler, S., Schall, D., Neumaier, D., Dobusch, L., Bethge, O., Schwarz, B., Krall, M., & Mueller, T. (2016). Controlled Generation of a p–n Junction in a Waveguide Integrated Graphene Photodetector. Nano Letters. https://doi.org/10.1021/acs.nanolett.6b03374

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