The DOI matches its Crossref record; 43 of the 43 references it cites were found in a registry or an index.
Achieving Ultrahigh Carrier Mobility in Two-Dimensional Hole Gas of Black Phosphorus
Open accessAbstract
We demonstrate that a field-effect transistor (FET) made of few-layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum exhibits a room-temperature hole mobility of 5200 cm 2 /(Vs), being limited just by the phonon scattering. At cryogenic temperatures, the FET mobility increases up to 45 000 cm 2 /(Vs), which is five times higher compared to the mobility obtained in earlier reports. The unprecedentedly clean h-BN–BP–h-BN heterostructure exhibits Shubnikov–de Haas oscillations and a quantum Hall effect with Landau level (LL) filling factors down to v = 2 in conventional laboratory magnetic fields. Moreover, carrier density independent effective mass of m * = 0.26 m 0 is measured, and a Landé g -factor of g = 2.47 is reported. Furthermore, an indication for a distinct hole transport behavior with up- and down-spin orientations is found.
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Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Experimental observation of the quantum Hall effect and Berry's phase in graphene
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Black phosphorus field-effect transistors
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High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
Qiao, J., Kong, X., Hu, Z.-X., Yang, F., & Ji, W. (2014) · Nature Communications · doi:10.1038/ncomms5475 · Cited by 4,442
Xia, F., Wang, H., & Jia, Y. (2014) · Nature Communications · doi:10.1038/ncomms5458 · Cited by 3,516
Mobility engineering and a metal–insulator transition in monolayer MoS2
Radisavljevic, B., & Kis, A. (2013) · Nature Materials · doi:10.1038/nmat3687 · Cited by 1,817
Isolation and characterization of few-layer black phosphorus
Castellanos-Gomez, A., Vicarelli, L., Prada, E., Island, J. O., Narasimha-Acharya, K. L., Blanter, S. I., Groenendijk, D. J., Buscema, M., Steele, G. A., Alvarez, J. V., et al. (2014) · 2D Materials · doi:10.1088/2053-1583/1/2/025001 · Cited by 1,621
Strain-Induced Gap Modification in Black Phosphorus
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Cited by
Bandgap engineering of two-dimensional semiconductor materials
Chaves, A., Azadani, J. G., Alsalman, H., da Costa, D. R., Frisenda, R., Chaves, A. J., Song, S. H., Kim, Y. D., He, D., Zhou, J., et al. (2020) · npj 2D Materials and Applications · doi:10.1038/s41699-020-00162-4 · Cited by 1,296
Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices
Pang, J., Bachmatiuk, A., Yin, Y., Trzebicka, B., Zhao, L., Fu, L., Mendes, R. G., Gemming, T., Liu, Z., & Rummeli, M. H. (2018) · Advanced Energy Materials · doi:10.1002/aenm.201702093 · Cited by 518
Knobloch, T., Illarionov, Y. Y., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., Taniguchi, T., Mueller, T., Waltl, M., Lanza, M., et al. (2021) · Nature Electronics · doi:10.1038/s41928-020-00529-x · Cited by 367
Black phosphorus and its isoelectronic materials
Xia, F., Wang, H., Hwang, J. C. M., Neto, A. H. C., & Yang, L. (2019) · Nature Reviews Physics · doi:10.1038/s42254-019-0043-5 · Cited by 322
Metadata
- Authors
- Long, G., Maryenko, D., Shen, J., Xu, S., Hou, J., Wu, Z., Wong, W. K., Han, T., Lin, J., Cai, Y., Lortz, R., & Wang, N.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2016-12-05
- Volume
- 16
- Issue
- 12
- Pages
- 7768-7773
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2351044835
- Cited by
- 287
- References
- 43
- FWCI
- 14.99
- Type
- journal article
- Language
- en
- Open access
- green
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- Long, G., Maryenko, D., Shen, J., Xu, S., Hou, J., Wu, Z., Wong, W. K., Han, T., Lin, J., Cai, Y., Lortz, R., & Wang, N. (2016). Achieving Ultrahigh Carrier Mobility in Two-Dimensional Hole Gas of Black Phosphorus. Nano Letters. https://doi.org/10.1021/acs.nanolett.6b03951
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