The DOI matches its Crossref record; 32 of the 32 references it cites were found in a registry or an index.
Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides
Open accessAbstract
Abstract Recently, two-dimensional (2D) atomic sheets have inspired new ideas in nanoscience including topologically protected charge transport,1, 2 spatially separated excitons,3 and strongly anisotropic heat transport.4 Here, we report the intriguing observation of stable nonvolatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX2, M = Mo, W; and X = S, Se) transitional metal dichalcogenides (TMDs),5 which alludes to the universality of this phenomenon in TMD monolayers and offers forming-free switching. This observation of NVRS phenomenon, widely attributed to ionic diffusion, filament, and interfacial redox in bulk oxides and electrolytes,6−9 inspires new studies on defects, ion transport, and energetics at the sharp interfaces between atomically thin sheets and conducting electrodes. Our findings overturn the contemporary thinking that nonvolatile switching is not scalable to subnanometre owing to leakage currents.10 Emerging device concepts in nonvolatile flexible memory fabrics, and brain-inspired (neuromorphic) computing could benefit substantially from the wide 2D materials design space. A new major application, zero-static power radio frequency (RF) switching, is demonstrated with a monolayer switch operating to 50 GHz.
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Cites
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
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Quantum spin Hall effect in two-dimensional transition metal dichalcogenides
Qian, X., Liu, J., Fu, L., & Li, J. (2014) · Science · doi:10.1126/science.1256815 · Cited by 2,053
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
Kang, K., Xie, S., Huang, L., Han, Y., Huang, P. Y., Mak, K. F., Kim, C.-J., Muller, D., & Park, J. (2015) · Nature · doi:10.1038/nature14417 · Cited by 1,961
Two-dimensional flexible nanoelectronics
Akinwande, D., Petrone, N., & Hone, J. (2014) · Nature Communications · doi:10.1038/ncomms6678 · Cited by 1,910
Self-citationObservation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures
Rivera, P., Schaibley, J. R., Jones, A. M., Ross, J. S., Wu, S., Aivazian, G., Klement, P., Seyler, K., Clark, G., Ghimire, N. J., et al. (2015) · Nature Communications · doi:10.1038/ncomms7242 · Cited by 1,691
Two-dimensional transition metal dichalcogenide nanosheet-based composites
Tan, C., & Zhang, H. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00182f · Cited by 1,605
A Review on Conduction Mechanisms in Dielectric Films
Chiu, F.-C. (2014) · Advances in Materials Science and Engineering · doi:10.1155/2014/578168 · Cited by 1,574
Memory and Information Processing in Neuromorphic Systems
Indiveri, G., & Liu, S.-C. (2015) · Proceedings of the IEEE · doi:10.1109/jproc.2015.2444094 · Cited by 1,037
Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
Bertolazzi, S., Krasnozhon, D., & Kis, A. (2013) · ACS Nano · doi:10.1021/nn3059136 · Cited by 1,035
Cited by
Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics
Huh, W., Lee, D., & Lee, C. (2020) · Advanced Materials · doi:10.1002/adma.202002092 · Cited by 586
Xu, R., Jang, H., Lee, M.-H., Amanov, D., Cho, Y., Kim, H., Park, S., Shin, H.-J., & Ham, D. (2019) · Nano Letters · doi:10.1021/acs.nanolett.8b05140 · Cited by 452
2D Material Based Synaptic Devices for Neuromorphic Computing
Cao, G., Meng, P., Chen, J., Liu, H., Bian, R., Zhu, C., Liu, F., & Liu, Z. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202005443 · Cited by 382
Long-term memory and synapse-like dynamics in two-dimensional nanofluidic channels
Robin, P., Emmerich, T., Ismail, A., Niguès, A., You, Y., Nam, G.-H., Keerthi, A., Siria, A., Geim, A. K., Radha, B., et al. (2023) · Science · doi:10.1126/science.adc9931 · Cited by 367
Thinnest Nonvolatile Memory Based on Monolayer h‐BN
Wu, X., Ge, R., Chen, P., Chou, H., Zhang, Z., Zhang, Y., Banerjee, S., Chiang, M., Lee, J. C., & Akinwande, D. (2019) · Advanced Materials · doi:10.1002/adma.201806790 · Cited by 282
Self-citation
Metadata
- Authors
- Ge, R., Wu, X., Kim, M., Shi, J., Sonde, S., Tao, L., Zhang, Y., Lee, J. C., & Akinwande, D.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2017-12-19
- Volume
- 18
- Issue
- 1
- Pages
- 434-441
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2774297425
- Cited by
- 586
- References
- 32
- FWCI
- 15.55
- Type
- journal article
- Language
- en
- Open access
- hybrid
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- Ge, R., Wu, X., Kim, M., Shi, J., Sonde, S., Tao, L., Zhang, Y., Lee, J. C., & Akinwande, D. (2018). Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides. Nano Letters. https://doi.org/10.1021/acs.nanolett.7b04342
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