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High-Efficiency Perovskite Quantum-Dot Light-Emitting Devices by Effective Washing Process and Interfacial Energy Level Alignment
Abstract
All inorganic perovskites quantum dots (PeQDs) have attracted much attention for used in thin film display applications and solid-state lighting applications, owing to their narrow band emission with high photoluminescence quantum yields (PLQYs), color tunability, and solution processability. Here, we fabricated low-driving-voltage and high-efficiency CsPbBr 3 PeQDs light-emitting devices (PeQD-LEDs) using a PeQDs washing process with an ester solvent containing butyl acetate (AcOBu) to remove excess ligands from the PeQDs. The CsPbBr 3 PeQDs film washed with AcOBu exhibited a PLQY of 42%, and a narrow PL emission with a full width at half-maximum of 19 nm. We also demonstrated energy level alignment of the PeQD-LED in order to achieve effective hole injection into PeQDs from the adjacent hole injection layer. The PeQD-LED with AcOBu-washed PeQDs exhibited a maximum power efficiency of 31.7 lm W –1 and EQE of 8.73%. Control of the interfacial PeQDs through ligand removal and energy level alignment in the device structure are promising methods for obtaining high PLQYs in film state and high device efficiency.
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Metadata
- Authors
- Chiba, T., Hoshi, K., Pu, Y.-J., Takeda, Y., Hayashi, Y., Ohisa, S., Kawata, S., & Kido, J.
- Venue
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Published
- 2017-05-16
- Volume
- 9
- Issue
- 21
- Pages
- 18054-18060
- ISSN
- 1944-8244 (ISSN-L)
- 1944-8252
- OpenAlex
- W2612022895
- Cited by
- 336
- References
- 47
- FWCI
- 19.02
- Type
- journal article
- Language
- en
- Open access
- closed
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