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Ambipolar Insulator-to-Metal Transition in Black Phosphorus by Ionic-Liquid Gating
Open accessAbstract
We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of ∼5 × 10(3). The band gap was determined as ≅0.35 eV from the transfer curve, and Hall-effect measurements revealed that the hole mobility was ∼190 cm(2)/(V s) at 170 K, which is 1 order of magnitude larger than the electron mobility. By inducing an ultrahigh carrier density of ∼10(14) cm(-2), an electric-field-induced transition from the insulating state to the metallic state was realized, due to both electron and hole doping. Our results suggest that black phosphorus will be a good candidate for the fabrication of functional devices, such as lateral p-n junctions and tunnel diodes, due to the intrinsic narrow band gap.
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Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Cited by
Recent progress in 2D group-VA semiconductors: from theory to experiment
Zhang, S., Guo, S., Chen, Z., Wang, Y., Gao, H., Gómez-Herrero, J., Ares, P., Zamora, F., Zhu, Z., & Zeng, H. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00125h · Cited by 850
Electrically-Transduced Chemical Sensors Based on Two-Dimensional Nanomaterials
Meng, Z., Stolz, R. M., Mendecki, L., & Mirica, K. A. (2019) · Chemical Reviews · doi:10.1021/acs.chemrev.8b00311 · Cited by 773
Sun, C., Wen, L., Zeng, J., Wang, Y., Sun, Q., Deng, L., Zhao, C., & Li, Z. (2016) · Biomaterials · doi:10.1016/j.biomaterials.2016.03.022 · Cited by 473
Emerging Trends in Phosphorene Fabrication towards Next Generation Devices
Dhanabalan, S. C., Ponraj, J. S., Guo, Z., Li, S., Bao, Q., & Zhang, H. (2017) · Advanced Science · doi:10.1002/advs.201600305 · Cited by 344
Achieving Ultrahigh Carrier Mobility in Two-Dimensional Hole Gas of Black Phosphorus
Long, G., Maryenko, D., Shen, J., Xu, S., Hou, J., Wu, Z., Wong, W. K., Han, T., Lin, J., Cai, Y., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b03951 · Cited by 287
Metadata
- Authors
- Saito, Y., & Iwasa, Y.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-03-02
- Volume
- 9
- Issue
- 3
- Pages
- 3192-3198
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2043866788
- Cited by
- 209
- References
- 1
- FWCI
- 11.86
- Type
- journal article
- Language
- en
- Open access
- green
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- Saito, Y., & Iwasa, Y. (2015). Ambipolar Insulator-to-Metal Transition in Black Phosphorus by Ionic-Liquid Gating. ACS Nano. https://doi.org/10.1021/acsnano.5b00497
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