The DOI matches its Crossref record; 43 of the 43 references it cites were found in a registry or an index.
All Chemical Vapor Deposition Growth of MoS2:h-BN Vertical van der Waals Heterostructures
Abstract
Vertical van der Waals heterostructures are formed when different 2D crystals are stacked on top of each other. Improved optical properties arise in semiconducting transition metal dichalcogenide (TMD) 2D materials, such as MoS2, when they are stacked onto the insulating 2D hexagonal boron nitride (h-BN). Most work to date has required mechanical exfoliation of at least one of the TMDs or h-BN materials to form these semiconductor:insulator structures. Here, we report a direct all-CVD process for the fabrication of high-quality monolayer MoS2:h-BN vertical heterostructured films with isolated MoS2 domains distributed across 1 cm. This is enabled by the use of few-layer h-BN films that are more robust against decomposition than monolayer h-BN during the MoS2 growth process. The MoS2 domains exhibit different growth dynamics on the h-BN surfaces compared to bare SiO2, confirming that there is strong interaction between the MoS2 and underlying h-BN. Raman and photoluminescence spectroscopies of CVD-grown MoS2 are compared to transferred MoS2 on both types of substrates, and our results show directly grown MoS2 on h-BN films have smaller lattice strain, lower doping level, cleaner and sharper interfaces, and high-quality interlayer contact.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Van der Waals heterostructures
Geim, A. K., & Grigorieva, I. V. (2013) · Nature · doi:10.1038/nature12385 · Cited by 10,875
Emerging Photoluminescence in Monolayer MoS2
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010) · Nano Letters · doi:10.1021/nl903868w · Cited by 9,501
Boron nitride substrates for high-quality graphene electronics
Dean, C. R., Young, A. F., Meric, I., Lee, C., Wang, L., Sorgenfrei, S., Watanabe, K., Taniguchi, T., Kim, P., Shepard, K. L., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.172 · Cited by 7,124
Tightly bound trions in monolayer MoS2
Mak, K. F., He, K., Lee, C., Lee, G. H., Hone, J., Heinz, T. F., & Shan, J. (2013) · Nature Materials · doi:10.1038/nmat3505 · Cited by 2,865
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Mishchenko, A., Georgiou, T., Katsnelson, M. I., Eaves, L., Morozov, S. V., et al. (2012) · Science · doi:10.1126/science.1218461 · Cited by 2,561
Bandgap Engineering of Strained Monolayer and Bilayer MoS2
Conley, H. J., Wang, B., Ziegler, J. I., Haglund, R. F., Pantelides, S. T., & Bolotin, K. I. (2013) · Nano Letters · doi:10.1021/nl4014748 · Cited by 2,497
Vertical and in-plane heterostructures from WS2/MoS2 monolayers
Gong, Y., Lin, J., Wang, X., Shi, G., Lei, S., Lin, Z., Zou, X., Ye, G., Vajtai, R., Yakobson, B. I., et al. (2014) · Nature Materials · doi:10.1038/nmat4091 · Cited by 2,323
Self-citationVapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
Najmaei, S., Liu, Z., Zhou, W., Zou, X., Shi, G., Lei, S., Yakobson, B. I., Idrobo, J.-C., Ajayan, P. M., & Lou, J. (2013) · Nature Materials · doi:10.1038/nmat3673 · Cited by 1,840
Georgiou, T., Jalil, R., Belle, B. D., Britnell, L., Gorbachev, R. V., Morozov, S. V., Kim, Y.-J., Gholinia, A., Haigh, S. J., Makarovsky, O., et al. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.224 · Cited by 1,751
Electrical control of neutral and charged excitons in a monolayer semiconductor
Ross, J. S., Wu, S., Yu, H., Ghimire, N. J., Jones, A. M., Aivazian, G., Yan, J., Mandrus, D. G., Xiao, D., Yao, W., et al. (2013) · Nature Communications · doi:10.1038/ncomms2498 · Cited by 1,583
Cited by
Recent Advances in Two-Dimensional Materials beyond Graphene
Bhimanapati, G. R., Lin, Z., Meunier, V., Jung, Y., Cha, J., Das, S., Xiao, D., Son, Y., Strano, M. S., Cooper, V. R., et al. (2015) · ACS Nano · doi:10.1021/acsnano.5b05556 · Cited by 2,659
Structure, Properties and Applications of Two‐Dimensional Hexagonal Boron Nitride
Roy, S., Zhang, X., Puthirath, A. B., Meiyazhagan, A., Bhattacharyya, S., Rahman, M. M., Babu, G., Susarla, S., Saju, S. K., Tran, M. K., et al. (2021) · Advanced Materials · doi:10.1002/adma.202101589 · Cited by 871
Interface-Assisted Synthesis of 2D Materials: Trend and Challenges
Dong, R., Zhang, T., & Feng, X. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.8b00056 · Cited by 710
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Self‐Powered Photodetectors Based on 2D Materials
Qiao, H., Huang, Z., Ren, X., Liu, S., Zhang, Y., Qi, X., & Zhang, H. (2020) · Advanced Optical Materials · doi:10.1002/adom.201900765 · Cited by 435
A Review of the Synthesis, Properties, and Applications of 2D Materials
Shanmugam, V., Mensah, R. A., Babu, K., Gawusu, S., Chanda, A., Tu, Y., Neisiany, R. E., Försth, M., Sas, G., & Das, O. (2022) · Particle & Particle Systems Characterization · doi:10.1002/ppsc.202200031 · Cited by 432
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures
Pierucci, D., Henck, H., Avila, J., Balan, A., Naylor, C. H., Patriarche, G., Dappe, Y. J., Silly, M. G., Sirotti, F., Johnson, A. T. C., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b00609 · Cited by 365
Memory materials and devices: From concept to application
Zhang, Z., Wang, Z., Shi, T., Bi, C., Rao, F., Cai, Y., Liu, Q., Wu, H., & Zhou, P. (2020) · InfoMat · doi:10.1002/inf2.12077 · Cited by 258
Morphological Engineering of Winged Au@MoS2 Heterostructures for Electrocatalytic Hydrogen Evolution
Li, Y., Majewski, M. B., Islam, S. M., Hao, S., Murthy, A. A., DiStefano, J. G., Hanson, E. D., Xu, Y., Wolverton, C., Kanatzidis, M. G., et al. (2018) · Nano Letters · doi:10.1021/acs.nanolett.8b03109 · Cited by 115
Metadata
- Authors
- Wang, S., Wang, X., & Warner, J. H.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-04-20
- Volume
- 9
- Issue
- 5
- Pages
- 5246-5254
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2332318693
- Cited by
- 389
- References
- 43
- FWCI
- 19.19
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
