The DOI matches its Crossref record; 119 of the 119 references it cites were found in a registry or an index.
Transistors based on two-dimensional materials for future integrated circuits
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Cites
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
2D transition metal dichalcogenides
Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V., & Kis, A. (2017) · Nature Reviews Materials · doi:10.1038/natrevmats.2017.33 · Cited by 6,075
Intrinsic and extrinsic performance limits of graphene devices on SiO2
Chen, J.-H., Jang, C., Xiao, S., Ishigami, M., & Fuhrer, M. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.58 · Cited by 3,173
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Das, S., Chen, H.-Y., Penumatcha, A. V., & Appenzeller, J. (2013) · Nano Letters · doi:10.1021/nl303583v · Cited by 2,428
Self-citationIn-memory computing with resistive switching devices
Ielmini, D., & Wong, H.-S. P. (2018) · Nature Electronics · doi:10.1038/s41928-018-0092-2 · Cited by 2,298
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
Kang, K., Xie, S., Huang, L., Han, Y., Huang, P. Y., Mak, K. F., Kim, C.-J., Muller, D., & Park, J. (2015) · Nature · doi:10.1038/nature14417 · Cited by 1,961
Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
Kappera, R., Voiry, D., Yalcin, S. E., Branch, B., Gupta, G., Mohite, A. D., & Chhowalla, M. (2014) · Nature Materials · doi:10.1038/nmat4080 · Cited by 1,847
High dielectric constant gate oxides for metal oxide Si transistors
Robertson, J. (2006) · Reports on Progress in Physics · doi:10.1088/0034-4885/69/2/r02 · Cited by 1,726
Graphene and two-dimensional materials for silicon technology
Akinwande, D., Huyghebaert, C., Wang, C.-H., Serna, M. I., Goossens, S., Li, L.-J., Wong, H.-S. P., & Koppens, F. H. L. (2019) · Nature · doi:10.1038/s41586-019-1573-9 · Cited by 1,713
Self-citation
Cited by
Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization
Dai, C., Liu, Y., & Wei, D. (2022) · Chemical Reviews · doi:10.1021/acs.chemrev.1c00924 · Cited by 303
Metadata
- Authors
- Das, S., Sebastian, A., Pop, E., McClellan, C. J., Franklin, A. D., Grasser, T., Knobloch, T., Illarionov, Y., Penumatcha, A. V., Appenzeller, J., Chen, Z., Zhu, W., Asselberghs, I., Li, L.-J., Avci, U. E., Bhat, N., Anthopoulos, T. D., & Singh, R.
- Venue
- Nature Electronics
- Published
- 2021-11-25
- Volume
- 4
- Issue
- 11
- Pages
- 786-799
- ISSN
- 2520-1131 (ISSN-L)
- OpenAlex
- W3214807145
- Cited by
- 983
- References
- 119
- FWCI
- 39.85
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Transistors based on two-dimensional materials for future integrated circuits. https://app.cochat.ai/papers/10.1038/s41928-021-00670-1
- The paper
- Das, S., Sebastian, A., Pop, E., McClellan, C. J., Franklin, A. D., Grasser, T., Knobloch, T., Illarionov, Y., Penumatcha, A. V., Appenzeller, J., Chen, Z., Zhu, W., Asselberghs, I., Li, L.-J., Avci, U. E., Bhat, N., Anthopoulos, T. D., & Singh, R. (2021). Transistors based on two-dimensional materials for future integrated circuits. Nature Electronics. https://doi.org/10.1038/s41928-021-00670-1
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
