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Atomic Layer Deposition of Platinum Thin Films

Aaltonen, Titta, Ritala, Mikko, Sajavaara, Timo, Keinonen, Juhani, Leskelä, Markku·2003·Chemistry of Materials

Abstract

Platinum thin films were grown at 300 °C by atomic layer deposition (ALD) using (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe 3 ) and oxygen as precursors. The films had excellent uniformity, low resistivity, and low-impurity contents. Structural studies by X-ray diffraction showed that the films were strongly (111) oriented. Growth rates of 0.45 Å cycle - 1 were obtained with 4 s total cycle times. The film thickness was found to linearly depend on the number of the reaction cycles. Also, the possible reaction mechanism is discussed.

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Metadata

Authors
Aaltonen, T., Ritala, M., Sajavaara, T., Keinonen, J., & Leskelä, M.
Venue
Chemistry of Materials
Published
2003-04-09
Volume
15
Issue
9
Pages
1924-1928
ISSN
  • 0897-4756 (ISSN-L)
  • 1520-5002
OpenAlex
W1981130398
Cited by
399
References
0
FWCI
8.04
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Atomic Layer Deposition of Platinum Thin Films. https://app.cochat.ai/papers/10.1021/cm021333t
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Aaltonen, T., Ritala, M., Sajavaara, T., Keinonen, J., & Leskelä, M. (2003). Atomic Layer Deposition of Platinum Thin Films. Chemistry of Materials. https://doi.org/10.1021/cm021333t

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.