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Preparation of GaN Single Crystals Using a Na Flux

Yamane, Hisanori, Shimada, Masahiko, Clarke, Simon J., DiSalvo, Francis J.·1997·Chemistry of Materials

Abstract

GaN single crystals were prepared in a sealed stainless steel tube at 600−800 °C from Ga using a Na flux and N2 from the thermal decomposition of sodium azide, NaN3. The maximum size of the crystals obtained was 2 mm. Oxygen and other impurity elements were not detected in the crystals by AES and EDX. When scaled up, this method may provide large GaN crystals for use as substrates for nitride based lasers.

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Metadata

Authors
Yamane, H., Shimada, M., Clarke, S. J., & DiSalvo, F. J.
Venue
Chemistry of Materials
Published
1997-02-01
Volume
9
Issue
2
Pages
413-416
ISSN
  • 0897-4756 (ISSN-L)
  • 1520-5002
OpenAlex
W1989150796
Cited by
295
References
0
FWCI
6.85
Type
journal article
Language
en
Open access
closed

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