The DOI matches its Crossref record; 89 of the 89 references it cites were found in a registry or an index.
Wide-bandgap semiconductor materials: For their full bloom
Open accessAbstract
Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. While GaN-based white LEDs have rapidly become widespread in the lighting industry, SiC- and GaN-based power devices have not yet achieved their popular use, like GaN-based white LEDs for lighting, despite having reached the practical phase. What are the issues to be addressed for such power devices? In addition, other wide-bandgap semiconductors such as diamond and oxides are attracting focusing interest due to their promising functions especially for power-device applications. There, however, should be many unknown phenomena and problems in their defect, surface, and interface properties, which must be addressed to fully exploit their functions. In this review, issues of wide-bandgap semiconductors to be addressed in their basic properties are examined toward their "full bloom".
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
A comprehensive review of ZnO materials and devices
Özgür, Ü., Alivov, Y. I., Liu, C., Teke, A., Reshchikov, M. A., Doğan, S., Avrutin, V., Cho, S.-J., & Morkoç, H. (2005) · Journal of Applied Physics · doi:10.1063/1.1992666 · Cited by 11,463
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
Nakamura, S., Mukai, T., & Senoh, M. (1994) · Applied Physics Letters · doi:10.1063/1.111832 · Cited by 3,823
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
A Survey of Wide Bandgap Power Semiconductor Devices
Millán, J., Godignon, P., Perpiñà, X., Pérez-Tomás, A., & Rebollo, J. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2268900 · Cited by 2,685
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Nakamura, S., Senoh, M., Nagahama, S.-I., Iwasa, N., Yamada, T., Matsushita, T., Hiroyuki Kiyoku, H. K., & Yasunobu Sugimoto, Y. S. (1996) · Japanese Journal of Applied Physics · doi:10.1143/jjap.35.l74 · Cited by 2,502
AlGaN/GaN HEMTs—An Overview of Device Operation and Applications
Mishra, U. K., Parikh, P., & Wu, Y.-F. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021567 · Cited by 2,312
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Amano, H., Sawaki, N., Akasaki, I., & Toyoda, Y. (1986) · Applied Physics Letters · doi:10.1063/1.96549 · Cited by 2,217
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
Amano, H., Kito, M., Hiramatsu, K., & Akasaki, I. (1989) · Japanese Journal of Applied Physics · doi:10.1143/jjap.28.l2112 · Cited by 2,002
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
Krames, M. R., Shchekin, O. B., Mueller-Mach, R., Mueller, G. O., Zhou, L., Harbers, G., & Craford, M. G. (2007) · Journal of Display Technology · doi:10.1109/jdt.2007.895339 · Cited by 1,939
Higashiwaki, M., Sasaki, K., Kuramata, A., Masui, T., & Yamakoshi, S. (2012) · Applied Physics Letters · doi:10.1063/1.3674287 · Cited by 1,813
Cited by
A review of Ga2O3 materials, processing, and devices
Pearton, S. J., Yang, J., Cary, P. H., Ren, F., Kim, J., Tadjer, M. J., & Mastro, M. A. (2018) · Applied Physics Reviews · doi:10.1063/1.5006941 · Cited by 3,117
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
A review on the GaN-on-Si power electronic devices
Zhong, Y., Zhang, J., Wu, S., Jia, L., Yang, X., Liu, Y., Zhang, Y., & Sun, Q. (2022) · Fundamental Research · doi:10.1016/j.fmre.2021.11.028 · Cited by 216
Metadata
- Authors
- Fujita, S.
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 2015-02-04
- Volume
- 54
- Issue
- 3
- Pages
- 030101
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W2004757370
- Cited by
- 383
- References
- 89
- FWCI
- 20.11
- Type
- journal article
- Language
- en
- Open access
- bronze
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Wide-bandgap semiconductor materials: For their full bloom. https://app.cochat.ai/papers/10.7567/jjap.54.030101
- The paper
- Fujita, S. (2015). Wide-bandgap semiconductor materials: For their full bloom. Japanese Journal of Applied Physics. https://doi.org/10.7567/jjap.54.030101
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.