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Cited by 383

The DOI matches its Crossref record; 89 of the 89 references it cites were found in a registry or an index.

Wide-bandgap semiconductor materials: For their full bloom

Open access
Fujita, Shizuo·2015·Japanese Journal of Applied Physics

Abstract

Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. While GaN-based white LEDs have rapidly become widespread in the lighting industry, SiC- and GaN-based power devices have not yet achieved their popular use, like GaN-based white LEDs for lighting, despite having reached the practical phase. What are the issues to be addressed for such power devices? In addition, other wide-bandgap semiconductors such as diamond and oxides are attracting focusing interest due to their promising functions especially for power-device applications. There, however, should be many unknown phenomena and problems in their defect, surface, and interface properties, which must be addressed to fully exploit their functions. In this review, issues of wide-bandgap semiconductors to be addressed in their basic properties are examined toward their "full bloom".

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Metadata

Authors
Fujita, S.
Venue
Japanese Journal of Applied Physics
Published
2015-02-04
Volume
54
Issue
3
Pages
030101
ISSN
  • 0021-4922 (ISSN-L)
  • 1347-4065
OpenAlex
W2004757370
Cited by
383
References
89
FWCI
20.11
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Wide-bandgap semiconductor materials: For their full bloom. https://app.cochat.ai/papers/10.7567/jjap.54.030101
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Fujita, S. (2015). Wide-bandgap semiconductor materials: For their full bloom. Japanese Journal of Applied Physics. https://doi.org/10.7567/jjap.54.030101

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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