The DOI matches its Crossref record; 35 of the 35 references it cites were found in a registry or an index.
Recent progress of GaN power devices for automotive applications
Open accessAbstract
Many power switching devices are used in hybrid vehicles (HVs) and electric vehicles (EVs). To improve the efficiency of HVs and EVs, better performance characteristics than those of Si power devices, for example, lower on-resistance, higher speed, higher operation temperature, are required for the power devices. GaN power devices are promising candidates for satisfying the requirements. A lateral GaN power device with a blocking voltage of 600 V and a vertical GaN power device with a blocking voltage of 1200 V are suitable for medium power applications for sub systems and high-power applications for the drive of main motors, respectively. Power device applications in HVs and EVs and the current status of the GaN power device are presented. The reliability of the GaN power device is also discussed.
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Cites
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
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Saito, W., Takada, Y., Kuraguchi, M., Tsuda, K., & Omura, I. (2006) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2005.862708 · Cited by 574
Power electronics on InAlN/(In)GaN: Prospect for a record performance
Kuzmik, J. (2001) · IEEE Electron Device Letters · doi:10.1109/55.962646 · Cited by 573
Cai, Y., Zhou, Y., Lau, K. M., & Chen, K. J. (2006) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2006.881054 · Cited by 537
Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate
Karmalkar, S., & Mishra, U. K. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.936500 · Cited by 459
Evaluation and Application of 600 V GaN HEMT in Cascode Structure
Huang, X., Liu, Z., Li, Q., & Lee, F. C. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2276127 · Cited by 415
Preparation of GaN Single Crystals Using a Na Flux
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Self-citation
Cited by
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Jones, E. A., Wang, F. F., & Costinett, D. (2016) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2016.2582685 · Cited by 1,259
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
Wide-bandgap semiconductor materials: For their full bloom
Fujita, S. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.030101 · Cited by 383
Metadata
- Authors
- Kachi, T.
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 2014-09-05
- Volume
- 53
- Issue
- 10
- Pages
- 100210
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W1987433943
- Cited by
- 360
- References
- 35
- FWCI
- 9.44
- Type
- journal article
- Language
- en
- Open access
- bronze
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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