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Electronic Design Criteria for O−O Bond Formation via Metal−Oxo Complexes
Abstract
Metal-oxos are critical intermediates for the management of oxygen and its activation. The reactivity of the metal-oxo is central to the formation of O-O bonds, which is the essential step for oxygen generation. Two basic strategies for the formation of O-O bonds at metal-oxo active sites are presented. The acid-base (AB) strategy involves the attack of a nucleophilic oxygen species (e.g., hydroxide) on an electrophilic metal-oxo. Here, active-site designs must incorporate the assembly of a hydroxide (or water) proximate to a high-valent metal-oxo of even d electron count. For the radical coupling (RC) strategy, two high-valent metal-oxos of an odd d electron count are needed to drive O-O coupling. This Forum Article focuses on the different electronic structures of terminal metal-oxos that support AB and RC strategies and the design of ligand scaffolds that engender these electronic structures.
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Metadata
- Authors
- Betley, T. A., Wu, Q., Van Voorhis, T., & Nocera, D. G.
- Venue
- Inorganic Chemistry
- Publisher
- American Chemical Society (ACS)
- Published
- 2008-03-01
- Volume
- 47
- Issue
- 6
- Pages
- 1849-1861
- ISSN
- 0020-1669 (ISSN-L)
- 1520-510X
- OpenAlex
- W2082345487
- Cited by
- 425
- References
- 74
- FWCI
- 16.81
- Type
- journal article
- Language
- en
- Open access
- closed
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