The DOI matches its Crossref record; 35 of the 35 references it cites were found in a registry or an index.
A Thienoisoindigo-Naphthalene Polymer with Ultrahigh Mobility of 14.4 cm2/V·s That Substantially Exceeds Benchmark Values for Amorphous Silicon Semiconductors
Abstract
By considering the qualitative benefits associated with solution rheology and mechanical properties of polymer semiconductors, it is expected that polymer-based electronic devices will soon enter our daily lives as indispensable elements in a myriad of flexible and ultra low-cost flat panel displays. Despite more than a decade of research focused on designing and synthesizing state-of-the-art polymer semiconductors for improving charge transport characteristics, the current mobility values are still not sufficient for many practical applications. The confident mobility in excess of ∼10 cm(2)/V·s is the most important requirement for enabling the realization of the aforementioned near-future products. We report on an easily attainable donor-acceptor (D-A) polymer semiconductor: poly(thienoisoindigo-alt-naphthalene) (PTIIG-Np). An unprecedented mobility of 14.4 cm(2)/V·s, by using PTIIG-Np with a high-k gate dielectric poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)), is achieved from a simple coating processing, which is of a magnitude that is very difficult to obtain with conventional TFTs by means of molecular engineering. This work, therefore, represents a major step toward truly viable plastic electronics.
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Metadata
- Authors
- Kim, G., Kang, S.-J., Dutta, G. K., Han, Y.-K., Shin, T. J., Noh, Y.-Y., & Yang, C.
- Venue
- Journal of the American Chemical Society
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-06-19
- Volume
- 136
- Issue
- 26
- Pages
- 9477-9483
- ISSN
- 0002-7863 (ISSN-L)
- 1520-5126
- OpenAlex
- W1974210684
- Cited by
- 607
- References
- 35
- FWCI
- 49.70
- Type
- journal article
- Language
- en
- Open access
- closed
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