Defect-Mediated Electron–Hole Separation in One-Unit-Cell ZnIn2S4 Layers for Boosted Solar-Driven CO2 Reduction

Abstract

The effect of defects on electron–hole separation is not always clear and is sometimes contradictory. Herein, we initially built clear models of two-dimensional atomic layers with tunable defect concentrations, and hence directly disclose the defect type and distribution at atomic level. As a prototype, defective one-unit-cell ZnIn 2 S 4 atomic layers are successfully synthesized for the first time. Aberration-corrected scanning transmission electron microscopy directly manifests their distinct zinc vacancy concentrations, confirmed by positron annihilation spectrometry and electron spin resonance analysis. Density-functional calculations reveal that the presence of zinc vacancies ensures higher charge density and efficient carrier transport, verified by ultrafast photogenerated electron transfer time of ∼15 ps from the conduction band of ZnIn 2 S 4 to the trap states. Ultrafast transient absorption spectroscopy manifests the higher zinc vacancy concentration that allows for ∼1.7-fold increase in average recovery lifetime, confirmed by surface photovoltage spectroscopy and PL spectroscopy analysis, which ensures promoted carrier separation rates. As a result, the one-unit-cell ZnIn 2 S 4 layers with rich zinc vacancies exhibit a carbon monoxide formation rate of 33.2 μmol g –1 h –1, roughly 3.6 times higher than that of the one-unit-cell ZnIn 2 S 4 layers with poor zinc vacancies, while the former’s photocatalytic activity shows negligible loss after 24 h photocatalysis. This present work uncovers the role of defects in affecting electron–hole separation at atomic level, opening new opportunities for achieving highly efficient solar CO 2 reduction performances.