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Cited by 313

The DOI matches its Crossref record; 22 of the 22 references it cites were found in a registry or an index.

Light-Emitting Two-Dimensional Ultrathin Silicon Carbide

Lin, S. S.·2012·The Journal of Physical Chemistry C

Abstract

Two-dimensional (2D) atomic crystals, especially graphene, have received much attention. However, the main shortcoming of graphene is its zero band gap. Silicon carbide, composed of silicon and carbon, is a typical wurtzite compound semiconductor, with more than 250 alloy types. Herein, we give some evidence of the solution exfoliation of 2D SiC nanoflakes with thickness down to 0.5–1.5 nm. Transmission electron microscopy (TEM) and X-ray diffraction characterizations reveal that graphitic (0001)/(0001̅) SiC most possibly has been formed by sonication of wurtzite SiC. Graphene, which is also produced in this process, naturally forms the ultrathin substrate facilitating the TEM characterization of 2D SiC. The mechanism of this exfoliation process should be related to the surface reconstruction of wurtzite SiC into graphitic SiC. Photoluminescence spectra show a strong light-emitting ability and a quantum-confinement-induced emission peak at 373 nm for these ultrathin SiC nanosheets.

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Metadata

Authors
Lin, S. S.
Venue
The Journal of Physical Chemistry C
Published
2012-02-08
Volume
116
Issue
6
Pages
3951-3955
ISSN
  • 1932-7447 (ISSN-L)
  • 1932-7455
OpenAlex
W2327084166
Cited by
313
References
22
FWCI
6.23
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Light-Emitting Two-Dimensional Ultrathin Silicon Carbide. https://app.cochat.ai/papers/10.1021/jp210536m
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Lin, S. S. (2012). Light-Emitting Two-Dimensional Ultrathin Silicon Carbide. The Journal of Physical Chemistry C. https://doi.org/10.1021/jp210536m

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