The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
Open accessAbstract
Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self-aligned geometries, palladium electrodes with low contact resistance, and high-κ dielectric gate insulators are realized. Electrical transport in these miniature transistors is nearly ballistic up to high biases at both room and low temperatures. Atomic-layer-deposited (ALD) high-κ films interact with nanotube sidewalls via van der Waals interactions without causing weak localization at 4 K. New fundamental understanding of ballistic transport, optical phonon scattering, and potential interfacial scattering mechanisms in nanotubes is obtained. Also, parallel arrays of such molecular transistors are enabled to deliver macroscopic currents−an important milestone for future circuit applications.
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Citations
Cites
Electronic Transport in Mesoscopic Systems
Datta, S. (1995) · doi:10.1017/cbo9780511805776 · Cited by 7,704
Cited by
Chemically Functionalized Carbon Nanotubes
Balasubramanian, K., & Burghard, M. (2005) · Small · doi:10.1002/smll.200400118 · Cited by 1,769
Current saturation in zero-bandgap, top-gated graphene field-effect transistors
Meric, I., Han, M. Y., Young, A. F., Ozyilmaz, B., Kim, P., & Shepard, K. L. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.268 · Cited by 1,634
MoS2transistors with 1-nanometer gate lengths
Desai, S. B., Madhvapathy, S. R., Sachid, A. B., Llinas, J. P., Wang, Q., Ahn, G. H., Pitner, G., Kim, M. J., Bokor, J., Hu, C., et al. (2016) · Science · doi:10.1126/science.aah4698 · Cited by 1,511
Self-citationSynthesis and Surface Engineering of Complex Nanostructures by Atomic Layer Deposition
Knez, M., Nielsch, K., & Niinistö, L. (2007) · Advanced Materials · doi:10.1002/adma.200700079 · Cited by 889
Deng, J., & Wong, H.-S. P. (2007) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.909043 · Cited by 746
Metadata
- Authors
- Javey, A., Guo, J., Farmer, D. B., Wang, Q., Yenilmez, E., Gordon, R. G., Lundstrom, M., & Dai, H.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2004-06-23
- Volume
- 4
- Issue
- 7
- Pages
- 1319-1322
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2168036963
- Cited by
- 493
- References
- 1
- FWCI
- 21.66
- Type
- journal article
- Language
- en
- Open access
- green
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- Javey, A., Guo, J., Farmer, D. B., Wang, Q., Yenilmez, E., Gordon, R. G., Lundstrom, M., & Dai, H. (2004). Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays. Nano Letters. https://doi.org/10.1021/nl049222b
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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