The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Intrinsic Current−Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping
Abstract
We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10(3)-10(4), subthreshold swing of 60 meV per decade, and transconductance of 9.5 x 10(3) Sm-1.
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Metadata
- Authors
- Yan, Q., Huang, B., Yu, J., Zheng, F., Zang, J., Wu, J., Gu, B.-L., Liu, F., & Duan, W.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2007-04-27
- Volume
- 7
- Issue
- 6
- Pages
- 1469-1473
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2169580059
- Cited by
- 563
- References
- 1
- FWCI
- 22.85
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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