The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics
Abstract
A high-performance low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible polymer substrate using solution-processable, high-capacitance ion gel gate dielectrics. The high capacitance of the ion gel, which originated from the formation of an electric double layer under the application of a gate voltage, yielded a high on-current and low voltage operation below 3 V. The graphene FETs fabricated on the plastic substrates showed a hole and electron mobility of 203 +/- 57 and 91 +/- 50 cm(2)/(V x s), respectively, at a drain bias of -1 V. Moreover, ion gel gated graphene FETs on the plastic substrates exhibited remarkably good mechanical flexibility. This method represents a significant step in the application of graphene to flexible and stretchable electronics.
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Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Graphene: Status and Prospects
Geim, A. K. (2009) · Science · doi:10.1126/science.1158877 · Cited by 13,942
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Cited by
Lab-on-Skin: A Review of Flexible and Stretchable Electronics for Wearable Health Monitoring
Liu, Y., Pharr, M., & Salvatore, G. A. (2017) · ACS Nano · doi:10.1021/acsnano.7b04898 · Cited by 1,725
High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
Wang, B., Huang, W., Chi, L., Al-Hashimi, M., Marks, T. J., & Facchetti, A. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.8b00045 · Cited by 818
Graphene-based transparent strain sensor
Bae, S.-H., Lee, Y., Sharma, B. K., Lee, H.-J., Kim, J.-H., & Ahn, J.-H. (2013) · Carbon · doi:10.1016/j.carbon.2012.08.048 · Cited by 777
Self-citationStretchable and self-healing polymers and devices for electronic skin
Benight, S. J., Wang, C., Tok, J. B. H., & Bao, Z. (2013) · Progress in Polymer Science · doi:10.1016/j.progpolymsci.2013.08.001 · Cited by 617
Stretchable and Multimodal All Graphene Electronic Skin
Ho, D. H., Sun, Q., Kim, S. Y., Han, J. T., Kim, D. H., & Cho, J. H. (2016) · Advanced Materials · doi:10.1002/adma.201505739 · Cited by 608
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Metadata
- Authors
- Kim, B. J., Jang, H., Lee, S.-K., Hong, B. H., Ahn, J.-H., & Cho, J. H.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2010-08-12
- Volume
- 10
- Issue
- 9
- Pages
- 3464-3466
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W1980210292
- Cited by
- 438
- References
- 3
- FWCI
- 14.83
- Type
- journal article
- Language
- en
- Open access
- closed
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- Kim, B. J., Jang, H., Lee, S.-K., Hong, B. H., Ahn, J.-H., & Cho, J. H. (2010). High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics. Nano Letters. https://doi.org/10.1021/nl101559n
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